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  1. No Access

    Article

    Effects of graphene content on resistive switching for Au/poly(methyl methacrylate): reduced graphene oxide/heavily doped p-type Si devices

    This study determines the effect of incorporating reduced graphene oxide (RGO) nanosheets into poly(methyl methacrylate) (PMMA) on the resistive switching (RS) mechanisms by measuring the current–voltage characte...

    Yow-Jon Lin, Chang-Lin Wu, Zun-Yuan Ke, Hsing-Cheng Chang in Indian Journal of Physics (2020)

  2. No Access

    Article

    Leakage conduction behavior for top- and bottom-contact pentacene thin film transistors

    The leakage conduction mechanisms for top-contact and bottom-contact pentacene-based organic thin film transistors (OTFTs) are studied. OTFTs that use a bottom-contact design exhibit lower leakage conduction t...

    Yow-Jon Lin, Chang-Lin Wu, Chia-Hung Chiang, Po-Chih Kuo in Indian Journal of Physics (2020)

  3. No Access

    Article

    Electrochemical properties and trap states of TiO2 nanoparticles modified by do** with graphene and used as counter electrodes for dye-sensitized solar cell applications

    The electrochemical properties and trap states of TiO2 nanoparticles that are modified by do** with graphene (Gr) and used as counter electrodes (CEs) for dye-sensitized solar cell (DSSC) applications are studi...

    Yow-Jon Lin, Chang-Lin Wu, Hsing-Cheng Chang in Indian Journal of Physics (2020)

  4. No Access

    Article

    Incorporation of MoS2 nanoflakes into poly(3-hexylthiophene)/n-type Si devices to improve the rectification behavior and optoelectronic performance

    This study determines the effect of incorporating MoS2 nanoflakes into poly(3-hexylthiophene) (P3HT) on the electrical conduction mechanisms using the rectification current–voltage characteristics of P3HT/n-type ...

    Chang-Lin Wu, Yow-Jon Lin in Indian Journal of Physics (2018)

  5. No Access

    Article

    Effects of interface modification on electrical and optoelectronic properties of p-type CuAlO2/n-type Si heterojunction devices

    The effect of interface modification on the electrical properties of heterojunction diodes based on the p-type CuAlO2 and n-type Si is investigated. Compared with the CuAlO2/Si device without H2O2 treatment, the ...

    Yow-Jon Lin, Gi-Min Chang, Chang-Lin Wu in Journal of Materials Science: Materials in… (2018)

  6. No Access

    Article

    Electrical and optoelectronic properties for devices that use MoS2 deposited on Si substrates with and without (NH4)2S x treatment by chemical vapor deposition

    To fabricate a MoS2/Si device, layers of MoS2 are directly deposited on an n-type Si (n-Si) substrate with/without (NH4)2S x treatment by chemical vapor deposition (CVD). X-ray ...

    Ting-Hong Su, Chang-Lin Wu… in Journal of Materials Science: Materials in… (2018)

  7. No Access

    Chapter and Conference Paper

    Research on Slope Climbing Capacity of a Close Chain Five-Bow-Shaped-Bar Linkage

    Slope climbing capacity of a close chain five-bow-shaped-bar linkage and minimum friction coefficient during climbing are analyzed. First, the analysis model of slope climbing for the closed linkage is establi...

    Lian-qing Yu, Yuan-yuan Mei, Yu-** Wang, Chang-lin Wu in Mechanism and Machine Science (2017)