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  1. No Access

    Article

    Crystallization of thin-film Si monitored in real time by in-situ spectroscopic techniques

    We have developed optical techniques for real-time, in-situ monitoring of crystallization and epitaxial growth of silicon. Real-time spectroscopic ellipsometry is used for evaluating epitaxial growth during ho...

    P. Stradins, C. W. Teplin, D. L. Young… in Journal of Materials Science: Materials in… (2007)

  2. No Access

    Article

    Real-time spectroscopic ellipsometry as an in-situ probe of the growth dynamics of amorphous and epitaxial crystal silicon for photovoltaic applications

    In this paper we report on our work using in-situ real time spectroscopic ellipsometry (RTSE) to study the dynamics of hot-wire chemical vapor deposition (HWCVD) of hydrogenated amorphous silicon (a-Si:H) and epi...

    D.H. Levi, C.W. Teplin, E. Iwaniczko, Y. Yan, T.H. Wang… in MRS Online Proceedings Library (2004)

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    Article

    Materials and Interface Optimization of Heterojunction Silicon (HIT) Solar Cells Using in-situ Real-Time Spectroscopic Ellipsometry

    We have applied real-time spectroscopic ellipsometry (RTSE) as both an in-situ diagnostic and post-growth analysis tool for hydrogenated amorphous silicon (a-Si:H)/crystalline silicon (c-Si) heterojunction with i...

    D. H. Levi, C. W. Teplin, E. Iwaniczko, R. K. Ahrenkiel… in MRS Online Proceedings Library (2003)