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  1. No Access

    Article

    Analysis of Etched CdZnTe Substrates

    State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe...

    J. D. Benson, L. O. Bubulac, M. Jaime-Vasquez… in Journal of Electronic Materials (2016)

  2. No Access

    Article

    As-Received CdZnTe Substrate Contamination

    State-of-the-art as-received (112)B CdZnTe substrates were examined for surface impurity contamination, polishing damage, and tellurium precipitates/inclusions. A maximum surface impurity concentration of Al =...

    J. D. Benson, L. O. Bubulac, M. Jaime-Vasquez… in Journal of Electronic Materials (2015)

  3. No Access

    Article

    Dynamic Curvature and Stress Studies for MBE CdTe on Si and GaAs Substrates

    Infrared focal plane arrays (IRFPA) based on HgCdTe semiconductor alloys have been shown to be ideal for tactical and strategic applications. High density (>1 M pixel), high operability HgCdTe detectors on lar...

    R. N. Jacobs, M. Jaime Vasquez, C. M. Lennon, C. Nozaki… in Journal of Electronic Materials (2015)

  4. No Access

    Article

    Analysis of Mesa Dislocation Gettering in HgCdTe/CdTe/Si(211) by Scanning Transmission Electron Microscopy

    Due to its strong infrared absorption and variable band-gap, HgCdTe is the ideal detector material for high-performance infrared focal-plane arrays (IRFPAs). Next-generation IRFPAs will utilize dual-color high...

    R. N. Jacobs, A. J. Stoltz, J. D. Benson, P. Smith… in Journal of Electronic Materials (2013)

  5. No Access

    Article

    Variable-Field Hall Measurement and Transport in LW Single-Layer n-Type MBE Hg1−x Cd x Te

    Molecular beam epitaxy n-type long-wavelength infrared (LWIR) Hg1−x Cd x Te (MCT) has been investigated using variable-field Hall measurement in the temperature r...

    A. E. Brown, M. Jaime-Vasquez, L. A. Almeida, J. Arias… in Journal of Electronic Materials (2013)

  6. No Access

    Article

    The Surface Kinetics of MBE-Grown CdTe (211)B During In Situ Cyclic Annealing

    The surface kinetics of CdTe (211)B grown by molecular beam epitaxy (MBE) is investigated using spectroscopic ellipsometry (SE) during in situ cyclic annealing. A method of measuring sublimation rates from high-i...

    C. M. Lennon, L. A. Almeida, R. N. Jacobs, J. D. Benson… in Journal of Electronic Materials (2013)

  7. No Access

    Article

    Impurity Gettering in (112)B HgCdTe/CdTe/Alternate Substrates

    The crystalline structure and impurity profiles of HgCdTe/CdTe/alternate substrate (AS; Si and GaAs are possibilities) and CdTe/AS were analyzed by secondary-ion mass spectrometry, atomic force microscopy, etc...

    J. D. Benson, L. O. Bubulac, C. M. Lennon, R. N. Jacobs… in Journal of Electronic Materials (2013)

  8. No Access

    Article

    Real-Time In Situ Monitoring of GaAs (211) Oxide Desorption and CdTe Growth by Spectroscopic Ellipsometry

    We describe the growth of CdTe (211)B by molecular beam epitaxy on large-area epiready GaAs (211)B substrates. Prior to CdTe growth, GaAs substrates were thermally cleaned under an As4 flux. Oxide desorption was ...

    C.M. Lennon, L.A. Almeida, R.N. Jacobs, J.K. Markunas… in Journal of Electronic Materials (2012)