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Article
Localized Charge Trap** Memory Cells in a 63 nm Generation with Nanoscale Epitaxial Cobalt Salicide Buried Bitlines
A 63nm Twin Flash memory cell with a size of 0.0225μm2 per 2 (or 4) bits is presented. To achieve small cell areas, a buried bit line and an aggressive gate length of 100 nm are the key features of this cell toge...
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Article
Measurement of the perfection of nanoscale multilayers
In modern materials science the characterisation of nanostructures is becoming increasingly important. For measurement of the quality of nanoscale multilayer arrangement with high spatial resolution a method i...
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Article
Nanostructure and thermoelectric properties of ReSi2±x thin films
Anomalies in the nanostructure evolution of ReSi2±x thin films have proved to be of large interest in connection with their thermoelectric properties. By means of electron microscopic methods the correlation bet...