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  1. No Access

    Article

    Wet Oxidation of Epitaxial Ge.36Si.64 on (100)Si

    The thermal oxidation of epitaxial Ge.36Si.64 on (100)Si is investigated experimentally for a wet ambient at 700°C and 1000°C. A pure silicon dioxide layer with pile-up of Ge behind the oxide is formed at 1000°C....

    W. S. Liu, G. Bai, M-A. Nicolet, C. H. Chern, V. Arbet… in MRS Online Proceedings Library (1991)

  2. No Access

    Article

    Characterization of Si1−xGex/Si Heterostructures Using Optically-Detected Magnetic Resonance

    Si1−xGex/Si heterostructures with varying layer-thicknesses have been characterized using photoluminescence and magnetic resonance detected on photoluminescence. Three of the four samples studied exhibit sharp ph...

    T. A. Kennedy, E. R. Glaser, J. M. Trombetta, K. L. Wang… in MRS Online Proceedings Library (1991)

  3. No Access

    Article

    Very Thick Coherently Strained GexSi1−x Layers Grown in a Narrow Temperature Window

    Strain relaxation of GexSi1−x layers is studied as a function of growth temperature. Extremely thick coherently strained layers whose thicknesses exceed more than fifty times of the critical thicknesses predicted...

    C. H. Chern, K. L. Wang, G. Bai, M. -A. Nicolet in MRS Online Proceedings Library (1991)

  4. No Access

    Article

    Measurement of Valence Band Offset in Strained GexSi1−x/Si Heterojunctions

    The valence band discontinuity ΔEv in the coherently strained GexSi1−x/Si heterostruc-ture is determined using I-V-T measurement. The electrical measurements of the band discontinuity of the pseudomorphic layers ...

    S. Khorram, C. H. Chern, K. L. Wang in MRS Online Proceedings Library (1991)

  5. No Access

    Chapter

    Resonant Tunneling of Holes in Strained Layers—SiGe/Si

    Resonant tunneling of holes in several Ge x Si 1- x /Si double barrier structures is reviewe...

    Kang L. Wang, C. H. Chern in Resonant Tunneling in Semiconductors (1991)