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    Performance and Reliability of SiC Power MOSFETs

    Due to the wide bandgap and other key materials properties of 4H-SiC, SiC MOSFETs offer performance advantages over competing Si-based power devices. For example, SiC can more easily be used to fabricate MOSFE...

    Daniel J. Lichtenwalner, Brett Hull, Vipindas Pala, Edward Van Brunt… in MRS Advances (2016)