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  1. No Access

    Article

    Temperature dependent in situ do** of ALD ZnO

    This study on ALD grown ZnO layers is aimed at the systematic study of the effect of incorporation of different Al contents on the properties of the layers. An alternate precursor pulse method was used for lay...

    Zs. Baji, Z. Lábadi, Z. E. Horváth, M. Fried… in Journal of Thermal Analysis and Calorimetry (2011)

  2. No Access

    Article

    Point defects generated by direct-wafer bonding of silicon

    High-purity float zone (FZ) silicon p- and n-type wafers were directly bonded hydrophobically at 700°C and 1050°C. Electrical I-V and capacitance-voltage (C-V) characterization was performed on p-n junctions o...

    L. Dózsa, B. Szentpáli, D. Pasquariello, K. Hjort in Journal of Electronic Materials (2002)

  3. No Access

    Article

    Wafer Curvature and Flatness Measurements Using The Magic-Mirror (Makyoh) Method

    A new method is presented for the measurement of the radii of curvature R of semiconductor wafers using the magic-mirror (Makyoh) technique. A flat mirror is placed beneath the sample, thus a second, “contour” im...

    J. SzabÓ, Ferenc Riesz, B. SzentpÁli in MRS Online Proceedings Library (1995)

  4. No Access

    Article

    A review article on the transport properties in fatfets upon irradiation

    We investigated the effect of 0.65 MeV electron irradiation on the transport parameters of GaAs FATFETs with an S-doped active channel of thickness 0.2 μm to 5 μm. We measured mainly the drift mobility and car...

    P. C. Euthymiou, C. D. Kourkoutas, B. Szentpáli, B. Kovács… in Acta Physica Hungarica (1994)

  5. No Access

    Article

    Measurement techniques for the determination of do** and mobility profiles in GaAs epitaxial layers

    A technique for the measurement of do** and mobility depth profiles in GaAs epitaxial layers is reported. The design as well as preparation technology of a test chip, an automated measurement set-up for on-w...

    B. Szentpáli, B. Kovács, F. Riesz, V. V. Tuyen in Acta Physica Hungarica (1994)

  6. No Access

    Article

    A new DLTS method

    A method and an apparatus used for measuring of the deep level content of semiconducting crystals are described. The investigation is based on the observation of capacitance (voltage) relaxation of diodes. The...

    B. Szentpáli in Acta Physica Academiae Scientiarum Hungaricae (1980)

  7. No Access

    Article

    Investigation of the do** level in overcompensated p-GaP layers grown by liquid phase epitaxy

    One of the most important steps in the production of GaP∶N light emitting diodes is the formation of thep−n junction of the diodes. Thep−n junction can be produced by epitaxial growth of a layer ofn-type, and fol...

    J. Pfeifer, L. Csontos, B. Szentpáli in Acta Physica Academiae Scientiarum Hungaricae (1978)

  8. No Access

    Article

    Characterization of GaAs epitaxial layers and diode chips for microwave device purposes

    In this paper some selected results of a systematic evaluation program to characterize GaAs epitaxial layers and microwave diode chips are reported. Besides conventional Hall measurements and Schottky diode pr...

    B. Pődör, I. Mojzes, B. Szentpáli in Acta Physica Academiae Scientiarum Hungaricae (1978)