Skip to main content

20 Result(s)

within B. Claflin Remove this filter

and

  1. No Access

    Article

    Al1-x ScxN Thin Film Structures for Pyroelectric Sensing Applications

    AlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly...

    V. Vasilyev, J. Cetnar, B. Claflin, G. Grzybowski, K. Leedy… in MRS Advances (2016)

  2. No Access

    Article

    Deep Traps in AlGaN/GaN Heterostructure Field-Effect Transistors Studied by Current-Mode Deep-Level Transient Spectroscopy: Influence of Device Location

    Across-wafer variation of deep traps in AlGaN/GaN heterostructure field- effect transistors (HFETs) has been studied using current-mode deep-level transient spectroscopy (I-DLTS). It is found that applying a b...

    Z.-Q. Fang, B. Claflin, D.C. Look in Journal of Electronic Materials (2011)

  3. No Access

    Article

    Traps in 4H-SiC Field-Effect Transistors Characterized by Capacitance- and Current-Mode Deep-Level Transient Spectroscopy

    Traps in SiC long-gate metal–semiconductor field-effect transistors (FATFETs) at different wafer positions have been characterized by deep-level transient spectroscopy (DLTS) based on capacitance (C-DLTS) or c...

    Z.-Q. Fang, B. Claflin, D. C. Look, F. Chai, B. Odekirk in Journal of Electronic Materials (2011)

  4. No Access

    Article

    Comparison of Epitaxial Graphene on Si-face and C-face 6H-SiC

    We present atomic force microscopy (AFM), Hall-effect measurement, and Raman spectroscopy results from graphene films on 6H-SiC (0001) and (000-1) faces (Si-face and C-face, respectively) produced by radiative...

    Shin Mou, J. J. Boeckl, L. Grazulis, B. Claflin… in MRS Online Proceedings Library (2010)

  5. No Access

    Article

    Vapor-phase Growth of High-quality ZnO Micro- and Nano-structures

    Micro- and nano-structures of ZnO have been grown on substrates from flowing carrier gases in a tube furnace. We have investigated how variations in the carrier gas composition, gas flow rate and the position ...

    M. Morales, D.C. Look, G.C. Farlow, B. Claflin in MRS Online Proceedings Library (2007)

  6. No Access

    Article

    Effects of Electron Irradiation on Deep Centers in High-Purity Semi-Insulating 6H-SiC

    Many point-defect–related centers have been investigated in electron-irradiated 6H-SiC by deep-level transient spectroscopy (DLTS). Most of them are believed to be related to vacancies. Our DLTS studies on dee...

    Z.-Q. Fang, B. Claflin, D.C. Look, G.C. Farlow in Journal of Electronic Materials (2007)

  7. No Access

    Article

    Changes in Electrical Characteristics of ZnO Thin Films Due to Environmental Factors

    The impact of light and controlled gas ambient on the electrical characteristics of ZnO:P grown by pulsed laser deposition (PLD) is investigated with temperature-dependent Hall-effect and photo-Hall-effect usi...

    B. Claflin, D. C. Look, D. R. Norton in Journal of Electronic Materials (2007)

  8. No Access

    Article

    Thermally stimulated current spectroscopy of high-purity semi-insulating 4H-SiC substrates

    High-purity semi-insulating (HPSI) 4H-SiC has been widely used as a substrate material for AlGaN/GaN high electron-mobility transistors because of its fairly good lattice match with GaN and its high thermal co...

    Z. -Q. Fang, B. Claflin, D. C. Look, L. Polenta… in Journal of Electronic Materials (2005)

  9. No Access

    Article

    Electrical and Magnetic Characteristics of MBEGrown GaMnN

    We present magnetometry and charge transport data for a GaMnN film with approximately 7% (atomic) Mn grown by molecular beam epitaxy. Measurements of magnetization vs. applied magnetic field show hysteresis co...

    J. D. Albrecht, J. E. van Nostrand, B. Claflin, Y. Liu… in Journal of Superconductivity (2005)

  10. No Access

    Article

    Electrical and Optical Properties of n-type and p-type ZnO

    In recent years, ZnO has been proposed for new electronic and optoelectronic devices, such as transparent transistors and UV light-emitting diodes (LEDs). The LED application will require both n-type and p-typ...

    D. C. Look, B. Claflin in MRS Online Proceedings Library (2004)

  11. No Access

    Article

    Remote Plasma Enhanced-Metal Organic Chemical Vapor Deposition of Zirconium Oxide/Silicon Oxide Alloy, (ZrO2)1−(SiO2)1−x (x:≤0.5), Thin Films for Advanced High-K Gate Dielectrics

    A remote plasma enhanced-metal organic chemical vapor deposition (RPE-MOCVD) process was developed for the preparation of non-crystalline (ZrO2)x-(SiO2)1−x (x ≤ 0.5) alloys, targeting the compound composition ZrS...

    D. Wolfe, K. Flock, R. Therrien, R. Johnson, B. Rayner… in MRS Online Proceedings Library (1999)

  12. No Access

    Article

    High-k Dielectrics and Dual Metal Gates: Integration Issues for New CMOS Materials

    Several metal and conducting metal nitride candidates were investigated for alternative gate electrode applications in future complimentary metal-oxide-semiconductor (CMOS) devices. High frequency capacitance-...

    B. Claflin, K. Flock, G. Lucovsky in MRS Online Proceedings Library (1999)

  13. No Access

    Article

    How do Impurities Affect the Growth of μc-Si:H?

    Ultra clean plasma CVD process opens the doorway to clarify the role of impurities in the growth process of μc-Si:H. A reduction of impurity levels during the growth extends the temperature range for crystalli...

    Toshihiro Kamei, Makoto Fukawa, Tatsuyuki Nishimiya… in MRS Online Proceedings Library (1998)

  14. No Access

    Article

    Chemical Stability of Advanced Metal Gate and Ultra-thin Gate Dielectric Interface During Rapid Thermal Annealing

    The chemical stability of the compound metals TiNx and WNx on SiO2 and SiO2/Si3N4 (ON) dielectric stacks is studied by on-line Auger electron spectroscopy (AES) following sequential rapid thermal annealing treatm...

    B. Claflin, M. Binger, G. Lucovsky in MRS Online Proceedings Library (1998)

  15. No Access

    Article

    Investigation of the Growth and Chemical Stability of Composite Metal Gates on Ultra-thin Gate Dielectrics

    The growth of reactively sputtered TiNx and WNx compound metal films on ultra-thin, remote plasma enhanced chemical vapor deposited SiO2 and SiO2/Si3N4 (ON) stack dielectrics is investigated from initial interfac...

    B. Claflin, M. Binger, G. Lucovsky, H.-Y. Yang in MRS Online Proceedings Library (1998)

  16. No Access

    Article

    Nucleation of p-Type Microcrystalline Silicon on Amorphous Silicon for n-i-p Solar Cells Using B(CH3)3 And BF3 Dopant Source Gases

    Real time spectroscopic ellipsometry (RTSE) has been applied to identify optimal conditions for the nucleation and growth of 120 Å microcrystalline silicon (μc-Si:H) p-layers by rf plasma-enhanced chemical vap...

    Joohyun Koh, H. Fujiwara, R. J. Koval, C. R. Wronski… in MRS Online Proceedings Library (1998)

  17. No Access

    Article

    α -RuCl3: A New Host for Polymer Intercalation. Lamellar Polymer/α -RuCI3 Nanocomposites.

    α -RuCl3 was identified as a new host for polymer intercalation using different intercalative methods. It is found that Li0.2RuCl3 exfoliates in water into single [RuCl3]x− layers which can be used to encapsulate...

    Lei Wang, Paul Brazis, Melissa Rocci, Carl R. Kannewurf… in MRS Online Proceedings Library (1998)

  18. No Access

    Article

    Photoinduced Reversible Conductivity and Photoconductivity Changes in Transparent Amorphous and Micro-Crystalline In2O3-x FILMS

    The dark conductivity σ of poorly conducting In2O3-x films can be enhanced by orders of magnitude by blue or UV light exposure at any temperature between 4.2K and 300K. The resulting high σ state of amorphous fil...

    P. Stradins, H. Fritzsche, B. Claflin in MRS Online Proceedings Library (1996)

  19. No Access

    Article

    Reversible Changes in the Electronic and Optical Properties of Micro-Crystalline In2O3-x: A Comparison with Amorphous In2O3-x

    The electrical conductance and optical absorption coefficient of microcrystalline indium oxide (c–In2O3–x) can be changed reversibly by several orders of magnitude by photoreduction and reoxidation. Photoreductio...

    B. Pashmakov, H. Fritzsche, B. Claflin in MRS Online Proceedings Library (1996)

  20. No Access

    Article

    The Role of oxygen diffusion in photoinduced changes of the electronic and optical properties in amorphous indium oxide

    A stable increase by as much as 108 in the conductivity of amorphous indium oxide to σ≥ 103Ω-1 cm−1 can be achieved by ultraviolet photoreduction. This treatment also increases the absorption coefficient, α(hυ), ...

    B. Claflin, H. Fritzsche in Journal of Electronic Materials (1996)