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Article
In Situ Band-Edge Monitoring of Cd1−yZnyTe Substrates for Molecular Beam Epitaxy of HgCdTe
We demonstrate the benefits of in situ band-edge monitoring of CdZnTe substrates for molecular beam epitaxy (MBE). The production of large-area Cd1−yZnyTe(211)B substrates up to and exceeding 8 × 8 cm2 brings new...
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Article
Correlation of Etch Pits and Dislocations in As-grown and Thermal Cycle-Annealed HgCdTe(211) Films
This paper reports observations of the different types of etch pits and dislocations present in thick HgCdTe (211) layers grown by molecular beam epitaxy on CdTe/Si (211) composite substrates. Dislocation anal...
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Article
A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds
HgCdTe is the material system of choice for many infrared sensing applications. Growth of this material can often be challenging. However, processing of this material system can be equally as challenging. Inco...
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Article
Analysis of Mesa Dislocation Gettering in HgCdTe/CdTe/Si(211) by Scanning Transmission Electron Microscopy
Due to its strong infrared absorption and variable band-gap, HgCdTe is the ideal detector material for high-performance infrared focal-plane arrays (IRFPAs). Next-generation IRFPAs will utilize dual-color high...
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Article
Reduction of Dislocation Density by Producing Novel Structures
HgCdTe, because of its narrow band gap and low dark current, is the infrared detector material of choice for several military and commercial applications. CdZnTe is the substrate of choice for HgCdTe as it can...
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Article
Reduction of Dislocation Density in HgCdTe on Si by Producing Highly Reticulated Structures
HgCdTe, because of its narrow band gap and low dark current, is the infrared detector material of choice for several military and commercial applications. CdZnTe is the substrate of choice for HgCdTe as it can...
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Article
The Distribution Tail of LWIR HgCdTe-on-Si FPAs: a Hypothetical Physical Mechanism
A model is proposed to explain disparities found in the operability values and histograms for long-wavelength infrared HgCdTe focal-plane arrays fabricated on Si substrates compared with those fabricated on Cd...
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Article
Effects of Substrate Temperature and Atomic Hydrogen Flow on the Mircocrystallinity of Evaporated Hydrogenated silicon Films
As a first step toward an understanding of the chemical and structural role of hydrogen in hydrogenated amorphous silicon, we utilized electron beam evaporation in an ultra high vacuum environment to deposit f...
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Article
Evaluation of Surface Cleaning of Si(211) for Molecular-Beam Epitaxy Deposition of Infrared Detectors
We report an assessment of the reproducibility of the HF cleaning process and As passivation prior to the nucleation of ZnTe on the Si(211) surface using temperature desorption spectroscopy, ion scattering spe...
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Article
Characterization of Dislocations in (112)B HgCdTe/CdTe/Si
The electrical performance of HgCdTe/Si photodiodes is shown not to have a direct relationship with the dislocation density as revealed by defect etching. This has led to an equivalent circuit model to explain...
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Article
Effects of HgCdTe on the Optical Emission of Inductively Coupled Plasmas
Inductively coupled plasmas (ICP) are the high-density plasmas of choice for processing HgCdTe and related compounds. Real-time examination of the ICP plasmas used to process HgCdTe would be desirable. In this...
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Article
Plasma Passivation Etching for HgCdTe
Inductively coupled plasmas (ICP) are the high-density plasmas of choice for the processing of HgCdTe and related compounds. Most dry plasma process works have been performed on HgCdTe for pixel delineation an...
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Article
Morphology of Inductively Coupled Plasma Processed HgCdTe Surfaces
Inductively coupled plasma (ICP) processing has become the industrial processing standard for HgCdTe and its related II–VI compounds. In this study ICP processes were developed that allow several microns of Hg...
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Article
Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe Sensors
Plasma etching of (112)B InSb to prepare this semiconductor for the heteroepitaxy deposition of CdTe and initial studies of CdTe epilayers grown by molecular beam epitaxy (MBE) on InSb (112)B substrates cleane...
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Article
Comparing ICP and ECR Etching of HgCdTe, CdZnTe, and CdTe
The surface roughness of inductively coupled plasma (ICP)-etched CdTe is greater than that of electron cyclotron resonance (ECR)-etched CdTe. This greater roughness is undesirable for further processing of the...
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Article
Surface structure of (111)A HgCdTe
The surface of (111)A HgCdTe has been studied by reflection high-energy electron diffraction and atomic force microscopy (AFM). The as-grown liquid-phase epitaxy (LPE) surface has bilayer (3.7 ± 0.2 Å) step/te...
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Article
Examination of the effects of high-density plasmas on the surface of HgCdTe
High-density argon-hydrogen plasmas have been demonstrated to be very effective as etchants of CdTe, CdZnTe, and HgCdTe materials for focal plane array applications. Understanding the physical, chemical, and e...
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Article
Effects of a-Si:H resist vacuum-lithography processing on HgCdTe
A vacuum-compatible process for carrying out lithography on Hg1−xCdxTe and CdTe films was previously demonstrated. It was shown that hydrogenated amorphous silicon (a-Si:H) could be used as a dry resist by projec...
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Article
Fabrication and characterization of two-color midwavelength/long wavelength HgCdTe infrared detectors
High-performance 20-µm unit-cell two-color detectors using an n-p+-n HgCdTe triple-layer heterojunction (TLHJ) device architecture grown by molecular beam epitaxy (MBE) on (211)-oriented CdZnTe substrates with mi...
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Article
Investigation of HgCdTe surface films and their removal
We have examined the formation and removal of native surface films on Hg1−xCdxTe (n-type, x=0.2). Samples were etched with a Br-based solution and then characterized by spectroscopic ellipsometry and X-ray photoe...
