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  1. No Access

    Article

    Three-dimensional nanohelices for chiral photonics

    We discuss the tailoring of linear chiroptical effects in three-dimensional plasmonic nanohelices by means of challenging technological nanoscaling approaches, allowing the operation of this metamaterial in th...

    V. Tasco, M. Esposito, F. Todisco, A. Benedetti, M. Cuscunà… in Applied Physics A (2016)

  2. No Access

    Article

    Characterization of Inversion Domains in GaN by Electric Force Microscopy in Conjunction with Transmission Electron Microscopy and Wet Chemical Etching

    Inversion domains (IDs) in III-nitride semiconductors degrade the performance of such devices, and so their identification and elimination is critical.An inversion domain on a Ga- polarity samples appears as a...

    F. Yun, P. Visconti, K. M. Jones, A. A. Baski, H. Morkoç… in MRS Online Proceedings Library (2011)

  3. No Access

    Article

    Persistent photocurrent effects in GaN/AlGaN multiquantum wells

    PhotoCurrent (PC) experiments on GaN/AlGaN multiple quantum wells, both spectrally and temporally resolved, have shown that a photopersistence effect exists in our samples even at room temperature. A peak in t...

    A. Bonfiglio, G. Traetta, M. Lomascolo, A. Passaseo… in MRS Online Proceedings Library (2011)

  4. No Access

    Article

    Structural, optical and electrical properties of GaN films grown by metalorganic chemical vapor deposition on sapphire.

    Properties of GaN layers grown by metalorganic chemical vapor deposition (MOCVD) on c-plane of sapphire have been investigated using atomic force microscopy (AFM), wet etching for defect investigation, transmi...

    P. Visconti, M. A. Reshchikov, F. Yun, K. M. Jones… in MRS Online Proceedings Library (2011)

  5. No Access

    Article

    Defect free InGaAs-based strain balanced MQW grown on virtual substrate by metallorganic chemical vapor deposition

    In this work we describe a novel system for photovoltaic applications which combines InGaAs based strain-balanced multiple quantum wells (MQWs) with a “virtual substrate”, designed to extend the absorption edg...

    A. Passaseo, R. Cingolani, M. Mazzer, M. Lomascolo… in MRS Online Proceedings Library (2011)

  6. No Access

    Article

    Effect of the internal electric fields in Quantum Dot laser structures grown by Metal Organic Chemical Vapor Deposition

    By means of a systematic study carried out on In0.5Ga0.5As/GaAs quantum dot electroluminescent devices grown by Metal Organic Chemical Vapor Deposition, we show that the combination of internal electric fields in...

    A. Passaseo, G. Maruccio, M. De Vittorio, S. De Rinaldis… in MRS Online Proceedings Library (2011)

  7. No Access

    Article

    Second harmonic generation in AlGaN, GaN and AlxGa1–xN/GaN multiple quantum well structures

    Second harmonic generation coefficients of GaN and AlxGa1–xN (x=0.08) thin films deposited by MOCVD on a sapphire 0001 substrate were deduced through the standard Maker fringes method. Measurements were performed...

    D. Passeri, M.C. Larciprete, A. Belardini, S. Paoloni, A. Passaseo… in Applied Physics B (2004)

  8. No Access

    Article

    First electrically injected QD-MCLED emitting at 1.3 µm, grown by metal organic chemical vapour deposition

    We present the fabrication of a Quantum Dot Microcavity Light Emitting Diode (QD-MCLED) emitting at 1.3 µm at room temperature. The long wavelength emission is achieved by using for the first time InGaAs QDs d...

    V. Tasco, M.T. Todaro, M. De Giorgi, M. Vittorio… in MRS Online Proceedings Library (2003)

  9. No Access

    Article

    Optical properties of InGaAs QDs grown in a GaAs matrix by MOCVD, emitting at 1300 nm at room temperature

    We investigate the optical properties of InGaAs QDs emitting at 1330 nm, directly grown by Metal Organic Chemical Vapor Deposition (MOCVD) in a GaAs matrix, without indium in the barrier. The PL characterizati...

    M.T. Todaro, M. De Giorgi, V. Tasco, M. De Vittorio… in MRS Online Proceedings Library (2003)

  10. No Access

    Article

    First electrically injected QD-MCLED emitting at 1.3 μm, grown by metal organic chemical vapour deposition

    We present the fabrication of a Quantum Dot Microcavity Light Emitting Diode (QD-MCLED) emitting at 1.3 μm at room temperature. The long wavelength emission is achieved by using for the first time InGaAs QDs d...

    V. Tasco, M.T. Todaro, M. De Giorgi, M. De Vittorio… in MRS Online Proceedings Library (2003)

  11. No Access

    Article

    Optical properties and photonic bands of GaAs photonic crystal waveguides with tilted square lattice

    Reflectance measurements at variable angle of incidence are performed on GaAs photonic crystal waveguides with unconventional square lattices. The technique yields the dispersion of photonic bands for the inve...

    M. Galli, M. Agio, L.C. Andreani, L. Atzeni… in The European Physical Journal B - Condense… (2002)

  12. No Access

    Chapter and Conference Paper

    Direct Imaging of InGaAs Quantum Dot States by Scanning Tunneling Spectroscopy

    A combination of scanning tunneling microscopy and spectroscopy has been employed to directly image the charge density of the confined electronic states of In0.5Ga0.5As quantum dots produced by epitaxial Stranski...

    T. K. Johal, R. Rinaldi, A. Passaseo… in Nanoscale Spectroscopy and Its Application… (2002)

  13. No Access

    Article

    A high power CH3OH FIR laser system with long-term stability

    A CH3OH FIR system has been developed for plasma diagnostics. A CO2 laser devoted to pump the CH3OH molecule has been studied. Different internal diameters of FIR cavity, input coupling holes and focusing lenses ...

    I. Boscolo, A. Pando, A. Passaseo… in International Journal of Infrared and Mill… (1986)