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Article
Effect of Rapid Thermal Oxidation on Blue and Red Luminescence Bands of Porous Silicon
Photoluminescence (PL) of porous silicon after rapid thermal oxidation was studied using excitation energies of 5.0 and 6.4 eV. The emission spectra in both cases are dominated by a broad blue band centered at...
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Article
Surface Photovoltage Measurement of Minority Carrier Diffusion Lengths Exceeding Wafer Thickness: Application to Iron Monitoring with Part Per Quadrillion Sensitivity
We discuss an approach to iron concentration determination in silicon, based on wafer-scale surface photovoltage measurement of the minority carrier diffusion length in the millimeter range. The approach combi...