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Article
Parameters and Composition of Plasma in a CF4 + H2 + Ar Mixture: Effect of CF4/H2 Ratio
The electrophysical parameters of the plasma and the kinetics of plasma-chemical processes in a CF4 + H2 + Ar mixture while varying the CF4/H2 ratio are studied. When using diagnostic methods and plasma modeling ...
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Article
Excitation Pulse Selection for UWB Antenna
The paper studies the influence of the voltage pulse waveform exciting the UWB antenna, on the radiated E-field amplitude. It is shown that the radiated pulse amplitude of the combined antenna excited by bipol...
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Article
Four-Channel Former of Bipolar Pulses of Various Durations in a Circuit with One Spark Gap
A four-channel bipolar pulse former with an amplitude of up to 80 kV, a duration of 1 ns (2 channels) and 2 ns (2 channels) and a repetition rate of 100 Hz at 50 Ohm loads is developed. The former is designed ...
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Article
The Influence of Small F2, H2, and HF Additives on the Concentration of Active Particles in Tetrafluoromethane Plasma
A comparative study of the effect of small (up to 20%) substituting additives F2, H2, and HF on the kinetics and stationary concentrations of neutral particles in 50% CF4 + 50% Ar plasma under the typical conditi...
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Article
Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures
A comparative study of the electrophysical parameters of the plasma, the fluorine atom concentrations, and the kinetics of reactive-ion etching of silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 mixtures of a varia...
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Article
A High-Power Source of Ultrawideband Radiation of Subnanosecond Duration with Controllable Characteristics
A high-power source of ultrawideband radiation of subnanosecond duration based on a hybrid antenna with an offset reflector has been developed. At the focus of the reflector, there is an array of 2 × 2 combine...
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Article
Plasma Parameters and Kinetics of Reactive Ion Etching of SiO2 and Si3N4 in an HBr/Cl2/Ar Mixture
The parameters of the gas phase and the kinetics of reactive ion etching of SiO2 and Si3N4 under conditions of an induction RF (13.56 MHz) discharge with a varying HBr/Cl2 ratio is studied. The study includes pla...
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Article
Controlling Silicon Etching Parameters in RF CHF3 Plasma by Optical Emission Spectroscopy
The processes of plasma-chemical and reactive-ion etching of silicon in trifluoromethane (CHF3) are studied using optical emission spectroscopy. The dependences of the radiation intensities of atoms and molecules...
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Article
Parameters of Gaseous Phase and Kinetics of Reactive Ion Etching of SiO2 in CF4/C4F8/Ar/He Plasma
The electrophysical parameters of plasma, concentrations of fluorine atoms, and kinetics of reactive-ion heterogeneous processes in the CF4 + C4F8 + Ar + He mixture with the variation of the Ar/He ratio and bias ...
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Article
On the Effect of the Cl2 + O2 + Ar Mixture Composition on the Concentrations of Chlorine and Oxygen Atoms in a Plasma
The effect of the initial composition of the Cl2 + O2 + Ar mixture on the electrical parameters of a plasma and stationary concentrations of atomic particles under an inductive rf (13.56 MHz) discharge is studied...
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Article
Peculiarities of the Kinetics of Heterogeneous Processes during the Etching of Silicon in CF4 and C2Br2F4 Plasma
A comparative study of the parameters of the plasma discharge and kinetics of heterogeneous processes (etching, polymerization) occurring on the silicon surface in CF4 and C2Br2F4 plasma is carried out. Plasma di...
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Article
On the Mechanisms Regulating the Plasma Composition and Kinetics of Heterogeneous Processes in a CF4 + CHF3 + Ar Mixture
The influence of the initial composition of a CF4 + CHF3 + Ar mixture and bias power on the electrical parameters of the plasma, the composition of the gas phase, and the kinetics of heterogeneous processes on th...
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Article
Plasma Parameters and Kinetics of Reactive-Ion Etching of Silicon in a C6F12O + Ar Mixture
The characteristics of the gas phase and the kinetics of reactive-ion etching of silicon in a 50% C6F12O + 50% Ar plasma are studied. The study scheme includes plasma diagnostics using Langmuir probes and optical...
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Article
Mechanisms of Plasma Etching of Titanium, Indium, Tin, and Zinc Oxides in a Mixture of HBr + Ar
The kinetics and mechanisms of reactive ion etching of titanium oxides (TiO2), indium (In2O3), tin (SnO2), and zinc (ZnO) in HBr + Ar plasma. It is found that an increase in the fraction of Ar is accompanied by a...
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Article
Specific Features of the Kinetics of the Reactive-Ion Etching of Si and SiO2 in a CF4 + O2 Mixture in a Low Power Supply Mode
The kinetics of reactive ion etching of Si and SiO2 in the plasma of a high-frequency (13.56 MHz) inductive discharge in a CF4 + O2 mixture in the range of input power of 200–600 W (0.02–0.06 W/cm3) is studied. T...
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Article
Kinetics of Reactive Ion Etching of Si, SiO2, and Si3N4 in C4F8 + O2 + Ar Plasma: Effect of the C4F8/O2 Mixing Ratio
The kinetics of reactive ion etching of an Si, SiO2, and Si3N4 in the C4F8 + O2 + Ar mixture with a varied C4F8/O2 mixing ratio under the conditions of an rf inductive discharge (13.56 MHz) is investigated. Using...
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Article
Kinetics of the Volumetric and Heterogeneous Processes in the Plasma of a C4F8 + O2 + Ar Mixture
In this paper, we investigate the relationship between the external and internal plasma parameters in a C4F8 + O2 + Ar mixture under conditions of an inductive radio-frequency (13.56 MHz) discharge. With the comb...
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Article
Kinetics and Mechanisms of Reactive-Ion Etching of Si and SiO2 in a Plasma of a Mixture of HBr + O2
In this paper, we investigate the kinetics and mechanisms of reactive-ion etching of Si and SiO2 in the plasma of an HBr + O2 mixture with a variable initial composition under conditions of the high-frequency (13...
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Article
Plasma Parameters and Kinetics of Active Particles in the Mixture CHF3 + O2 + Ar
The effect of the O2/Ar component ratio in the CHF3 + O2 + Ar mixture on the electrical parameters of the plasma, kinetics of active particles, and their stationary concentrations under the high-frequency (13.56 ...
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Article
Concerning the Effect of Type of Fluorocarbon Gas on the Output Characteristics of the Reactive-Ion Etching Process
The comparative research of the parameters, steady-state composition, and the effects of heterogeneous interaction in the plasma of fluorocarbon gases CxHyFz with various z/x relations in conditions of an inducti...
