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  1. No Access

    Article

    Optical Properties of Alq3/TiO2 BDR Structure Processed by Spin Coating Technique

    L. Ajith DeSilva, Sarahn Nazaret, A. G. U. Perera, T. M. W. J. Bandara in MRS Advances (2019)

  2. No Access

    Article

    Broad absorption natural dye (Mondo-Grass berry) for dye sensitized solar cell

    Two major drawbacks in dye-sensitized solar cells (DSSC) are the narrow spectral response and the short-term stability. Research on development of artificial dyes for a broad frequency response is a major fiel...

    L. Ajith DeSilva, P. K. D. D. P. Pitigala… in Journal of Materials Science: Materials in… (2017)

  3. No Access

    Article

    Band Offsets of III–V and II–VI Materials Studied by Temperature-Dependent Internal Photoemission Spectroscopy

    The band offset at the interface of a heterojunction is one of the most important parameters determining the characteristics of devices constructed from heterojunction. Accurate knowledge of band offsets and t...

    A. G. U. Perera, Y. F. Lao, P. S. Wijewarnasuriya… in Journal of Electronic Materials (2016)

  4. No Access

    Article

    Wavelength and polarization selective multi-band tunnelling quantum dot detectors

    The reduction of the dark current without reducing the photocurrent is a considerable challenge in develo** far-infrared (FIR)/terahertz detectors. Since quantum dot (QD) based detectors inherently show low ...

    A. G. U. Perera, G. Ariyawansa, V. M. Apalkov, S. G. Matsik… in Opto-Electronics Review (2007)

  5. No Access

    Article

    Quantum structures for multiband photon detection

    The work describes multiband photon detectors based on semiconductor micro-and nano-structures. The devices considered include quantum dot, homojunction, and heterojunction structures. In the quantum dot struc...

    A. G. U. Perera in Opto-Electronics Review (2006)

  6. No Access

    Article

    Longitudinal-optical phonon hole-plasmon coupled modes in heavily doped p-type GaSb:Zn epitaxial films

    Reflectance measurements from p-type GaSb:Zn epitaxial films with different hole concentrations (1017–1018 cm-3) have been investigated over the frequency region of 100–1000 cm-1. A minimum broadening feature cor...

    Z. G. Hu, M. B.M. Rinzan, A. G.U. Perera… in The European Physical Journal B - Condense… (2006)

  7. No Access

    Article

    Effect of interface states on negative capacitance characteristics in GaAs homojunction far-infrared detectors

    Bias-, frequency- and temperature-dependent capacitance characteristics of p-GaAs homojunction interfacial work-function internal photoemission (HIWIP) far-infrared detectors are reported. A strong negative ca...

    W.Z. Shen, A.G.U. Perera in Applied Physics A (2001)

  8. No Access

    Article

    Application of Free Carrier Absorption for Far-Infrared Detection

    Far-infrared (FIR) free-carrier absorption characteristics for epitaxially grown p-type Si and GaAs thin films over a range of carrier concentrations have been investigated, both experimentally and theoretical...

    W. Z. Shen, A. G. U. Perera in International Journal of Infrared and Millimeter Waves (2000)

  9. No Access

    Chapter

    Far-Infrared (λc=28.6 μm) GaAs/AlGaAs Quantum Well Photodetectors

    We demonstrate the longest wavelength (λc=28.6 μm) far-infrared GaAs/AlGaAs quantum well photodetectors (QWIPs) based on a bound-to-bound intersubband transitions. The responsivity is comparable to that of mid-in...

    A. G. U. Perera, W. Z. Shen, S. G. Matsik… in Intersubband Transitions in Quantum Wells:… (1998)

  10. No Access

    Article

    Free Carrier Absorption in P-Type Epitaxial Si and GaAs Films for far-Infrared Detection

    We report the investigation of free-carrier absorption characteristics for epitaxially grown p-type thin films in the far-infrared region (50 ∼ 200 µm), where homojunction interfacial workfunction internal pho...

    A. G. U. Perera, W. Z. Shen, M. O. Tanner, K. L. Wang… in MRS Online Proceedings Library (1997)

  11. No Access

    Chapter

    Evidence for LWIR Emission Using Intersubband Transitions in GaAs/AlGaAs MQW Structures

    Infrared emission using intersubband transitions in GaAs/AlGaAs multi-quantum well structures is discussed. Even for energies higher than the optical phonon values, the photon emission process which is limited...

    A. G. U. Perera in Quantum Well Intersubband Transition Physics and Devices (1994)

  12. No Access

    Article

    A Novel Wavelength Tunable Silicon Detector for Infrared Detection

    A cryogenic extrinsic silicon detector which can detect IR photons of very low energy, i.e., down to about 5.5 meV ( 220 μm) is presented. The mechanism involves photoexcitation of carriers over low energy interf...

    A. G. U. Perera, R. E. Sherriff, M. H. Francombe… in MRS Online Proceedings Library (1992)

  13. No Access

    Article

    Parallel asynchronous focal plane array processing

    A new approach to focal plane processing based on silicon injection mode devices is suggested. These devices provide a natural basis for parallel asynchronous focal plane image preprocessing. The simplicity an...

    D. D. Coon, A. G. U. Perera in International Journal of Infrared and Millimeter Waves (1987)

  14. No Access

    Article

    Spectral information coding by infrared photoreceptors

    Spontaneous pulsing has been observed in circuits containing cryogenically cooled silicon p-i-n (p+-n-n+) diodes under dc forward bias. The intensity of infrared radiation incident on the diodes controls the puls...

    D. D. Coon, A. G. U. Perera in International Journal of Infrared and Millimeter Waves (1986)