32 Result(s)
within
A. F. Qasrawi
Materials Science
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Article
p-Si/n-CrSe2 Heterojunctions Designed as High-Frequency Capacitors and Photosensors
In this work, polycrystalline n-CrSe2 nanosheets with thickness of 100 nm are grown on p-type Si wafers by the thermal deposition technique under vacuum pressure of 10−5 mbar. Structural and optical investigation...
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Article
Production of PtInx Thin Films by the Pulsed Laser Welding Technique
Herein, PtInx nanosheets are fabricated by the pulsed laser welding technique (PLW) in an argon atmosphere within seconds from stacked layers of Pt (150 nm) and In (150 nm). Pt/In stacked layers coated by thermal...
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Article
LaGe2 Thin Films Designed as Band Filters for 6G Communication Technology
Herein, LaGe2 thin films with thickness of 150 nm are grown on thin layers of indium by the thermal evaporation technique under a vacuum pressure of 10−5 mbar. The films are structurally, morphologically, composi...
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Article
In/MgSe Terahertz Filters with Enhanced Optical Conduction and Light Absorption
In this work, semitransparent indium thin films with thickness of 200 nm were used as substrates for depositing magnesium selenide thin films (200 nm). Both indium and MgSe films were coated onto ultrasonicall...
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Article
Growth and Characterization of Vacuum Evaporated MgSe Thin Films
Herein, thin films of magnesium selenide are thermally grown in a vacuum deposition (VD) system onto glass substrates under a vacuum pressure of 10–5 mbar. The films are structurally, morphologically, composition...
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Article
Transparent In/SeO2 Thin Film Transistors Designed for Gigahertz/Terahertz Technologies
Herein, thin films of selenium oxide are coated onto transparent indium substrates with thickness of 150 nm under vacuum pressure of 10–5 mbar. In/SeO2 optical receivers are structurally, optically and electrical...
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Article
Structural, Optical and Electrical Properties of Band-Aligned CdBr2/Au/Ga2S3 Interfaces and Their Application As Band Filters Suitable for 5G Technologies
Herein, the structural, optical and electrical properties of band-aligned CdBr2/Ga2S3 interfaces in the presence and absence of Au nanosheets (10-20 nm) as interface spacers are reported. CdBr2/Au/Ga2S3 (CAG) sta...
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Article
Design and Characterization of (Yb, Al, Cu, Au)/GeO2/C As MOS Field Effect Transistors, Negative Capacitance Effect Devices and Band Pass/Reject Filters Suitable for 4G Technologies
Herein, the effect of Yb, Al, Cu and Au metal substrates on the electrical performance of germanium oxide-based devices is reported. Back-to-back Schottky-type metal-insulator-metal (MIM) electronic devices wi...
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Article
Performance of Broken Gap MoO3/ZnS Heterojunctions as Abrupt Electronic Switches, MOSFETs, Negative Capacitance FETs and Bandpass Filters Suitable for 3G/4G Technologies
Herein, MoO3/ZnS broken gap heterojunction devices are fabricated by thermal evaporation under a vacuum pressure of 10−5 mbar. The devices are characterized by X-ray diffraction, energy dispersive X-ray spectrosc...
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Article
Nickel Do** Effects on the Structural and Dielectric Properties of Ba(Zn1/3Nb2/3)O3 Perovskite Ceramics
The effects of nickel do** into Ba(Zn1/3Nb2/3)O3 (acronym: BZN) ceramics is structurally, morphologically and electrically investigated. The nickel substitution in sites of Zn which was carried out by the solid...
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Article
In Situ Observation of Heat-Assisted Hexagonal-Orthorhombic Phase Transitions in Se/Ag/Se Sandwiched Structures and Their Effects on Optical Properties
In this work, two selenium layers of 500-nm thickness, nano-sandwiched with Ag nanosheets of 100-nm thickness (Se/Ag/Se), are subjected to in situ monitoring of the structural and optical transitions during he...
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Article
Exploring the Optical Dynamics in the ITO/As2Se3 Interfaces
In this work, the effects of indium tin oxide (ITO) substrates on the structural, compositional, optical dielectric and optical conduction properties of arsenic selenide thin films are investigated. The As2Se3 fi...
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Article
Structural, Optical, Dielectric and Electrical Properties of Al-Doped ZnSe Thin Films
In this work, the heavy aluminum do** effects on the compositional, structural, optical, dielectric and electrical properties of ZnSe thin films are investigated. It is observed that the Zn/Se compositional ...
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Article
Formation and Characterization of Cd2S3 Polycrystalline Films onto Glass and Lanthanum Substrates
In this article, the structural, optical and dielectric properties of the rarely investigated Cd2S3 thin films are reported. Particularly, Cd2S3 thin films prepared by the thermal evaporation technique onto glass...
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Article
Negative Capacitance Effect in Ag/α-In2Se3/CdS/CdSe/C Dual Band Stop Filters
In the current study, a 1.5 μm thick three channel microwave band filter is designed and characterized. The thin film device which was constructed from the indium selenide, cadmium sulfide and cadmium selenide st...
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Article
Dielectric and Optoelectronic Properties of InSe/CdS/CdSe Heterojunctions
The effect of an InSe substrate on the structural, optical and dielectric properties of CdS/CdSe heterojunctions prepared by physical vapor deposition technique under vacuum pressure of 10−8 bar are reported. The...
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Article
Performance of Ge-Sandwiched GaSe Layers
In the current work, we report the effect of sandwiching Ge between two stacked layers of GaSe. The GaSe and Ge-sandwiched GaSe were subjected to x-ray diffraction, optical spectrophotometry and impedance spec...
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Article
Design and Characterization of the Ge/Ga2S3 Heterojunction
In this work, the formation and properties of Ga2S3 thin films deposited onto polycrystalline Ge substrates are studied by means of scanning electron microscopy, energy dispersive x-ray analyzer, Raman spectrosco...
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Article
Mechanical and electrical properties of Bi1.5-xLaxZn0.92Nb1.5O6.92 pyrochlore ceramics
The physical properties of Bi1.5-xLaxZn0.92Nb1.5O6.92 solid solutions are investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersion X-ray spectroscopy (EDS), and temp...
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Article
Properties of Se/InSe Thin-Film Interface
Se, InSe, and Se/InSe thin films have been prepared by the physical vapor deposition technique at pressure of ∼10−5 torr. The structural, optical, and electrical properties of the films and Se/InSe interface were...
