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Article
Electro-optical dynamics in SnO2 designed as negative resistance sources and gigahertz/terahertz band filters
Amorphous thin films of SnO2, prepared by a vacuum evaporation technique under a pressure of 10− 5 mbar, are employed as electro-optical filters suitable for microwave, infrared, and visible light communication t...
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Article
p-Si/n-CrSe2 Heterojunctions Designed as High-Frequency Capacitors and Photosensors
In this work, polycrystalline n-CrSe2 nanosheets with thickness of 100 nm are grown on p-type Si wafers by the thermal deposition technique under vacuum pressure of 10−5 mbar. Structural and optical investigation...
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Article
Growth of Polycrystalline n- CrSe2 Nanosheets Onto p –Si Substrates and their Applications as Rectifiers and Gigahertz Band Filters
In the current study polycrystalline nanosheets of CrSe2 of thicknesses of 100 nm are deposited onto \(p-\) ...
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Article
Effects of Amorphous Si Substrates on the Optoelectronic Properties of Zinc Phthalocyanine Thin Films
In the current work the effect of amorphous silicon (a-Si) substrates on the structural, optical and electrical properties of zinc phthalocyanine (ZnPc) thin films is explored. ZnPc thin films are coated onto ...
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Article
Enhanced performance of Pb/FeSe2 interfaces designed for electrical applications
In this work, iron selenide layers are deposited onto glass and lead substrates to perform as terahertz filters. The layers are deposited by the thermal evaporation technique under a vacuum pressure of 10–5 mbar....
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Article
InSe/CrSe Interfaces Performed as Resistive Switches and Band Filters for Gigahertz/Terahertz Communication Technology Applications
Herein chromium selenide (n-CrSe) nanosheets are deposited onto amorphous indium selenide (n-InSe) thin films by the thermal evaporation technique under a vacuum pressure of 10−5 mbar. The formed InSe/CrSe hetero...
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Article
Growth and characterization of chromium selenide thin films for optoelectronic applications
Herein amorphous and stoichiometric CrSe2 thin films are obtained by the thermal deposition (TD) technique under a vacuum pressure of 10−5 mbar. The films are structurally, morphologically, optically and dielectr...
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Article
Lead Selenide Thin Films Designed for Laser Sensing and Visible Light Communications
Herein thin films of PbSe are coated onto amorphous glass, amorphous silicon (a−Si) and crystalline n−type Si (n−Si) wafers by the thermal evaporation technique under a vacuum pressure of 10−5 mbar. The films are...
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Article
Production of PtInx Thin Films by the Pulsed Laser Welding Technique
Herein, PtInx nanosheets are fabricated by the pulsed laser welding technique (PLW) in an argon atmosphere within seconds from stacked layers of Pt (150 nm) and In (150 nm). Pt/In stacked layers coated by thermal...
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Article
Copper do** effects on the optical and dielectric properties of amorphous indium selenide thin films
In this study, to enhance their optoelectronic performances, amorphous indium selenide (a-InSe) thin films were doped with copper using the thermal evaporation technique under a vacuum pressure of 10–5 mbar. The ...
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Article
LaGe2 Thin Films Designed as Band Filters for 6G Communication Technology
Herein, LaGe2 thin films with thickness of 150 nm are grown on thin layers of indium by the thermal evaporation technique under a vacuum pressure of 10−5 mbar. The films are structurally, morphologically, composi...
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Article
Electrical properties of amorphous Cu doped InSe thin films
In this study, we employed thermal evaporation under vacuum conditions to introduce copper dopants into amorphous InSe thin films. Our objective was to scrutinize the effects of varied copper do** concentrat...
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Article
High-performance n – Si/p – SeO2 /p – SiO2 heterojunction photodetectors for potential application in visible light communication technology
Photodetectors suitable for visible light communication (VLC) technology were fabricated and characterized in this study. The photodetectors were designed using two p-type stacked layers of SeO2 and SiO2, which w...
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Article
Selenium oxide based laser sensors designed for optoelectronic applications
In this study, stacked layers of \(p-\) p - ...
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Article
In/MgSe Terahertz Filters with Enhanced Optical Conduction and Light Absorption
In this work, semitransparent indium thin films with thickness of 200 nm were used as substrates for depositing magnesium selenide thin films (200 nm). Both indium and MgSe films were coated onto ultrasonicall...
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Article
Enhanced properties of indium thin films by stacking with platinum nanosheets designed for advanced terahertz/gigahertz applications
Herein stacked layers of metallic indium (150 nm) and platinum (50–250 nm) thin films are fabricated as a terahertz/gigahertz filters. Indium thin films are produced by the thermal evaporation technique under ...
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Article
Induced crystallization and enhanced light absorption and optical conduction in WO3 films via pulsed laser welding technique
Herein amorphous WO3 thin films prepared by the thermal evaporation technique under a vacuum pressure of 10−5 mbar are treated via pulsed laser welding technique (PLW) in an argon atmosphere. An induced crystalli...
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Article
Enhancement of the electrical properties of Au/MgSe/Au microwave resonators via pulsed laser welding of MgSe and Au nanosheets
Herein, stacked nanosheets of Au (50 nm) and MgSe (100 nm) are fabricated by the thermal evaporation technique and welded by pulsed lasers of wavelengths of 1064 nm within few seconds. Au/MgSe (AMA) and welded...
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Article
Properties of (Glass, Pb)/MgSe Interfaces Designed as Terahertz Band Filters
Herein, thin films of MgSe (300 nm) are deposited onto glass and semitransparent Pb (150 nm) substrates by the thermal evaporation technique under a vacuum pressure of 10−5 mbar. The films are structurally, morph...
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Article
Growth and Characterization of Vacuum Evaporated MgSe Thin Films
Herein, thin films of magnesium selenide are thermally grown in a vacuum deposition (VD) system onto glass substrates under a vacuum pressure of 10–5 mbar. The films are structurally, morphologically, composition...