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  1. No Access

    Article

    Transport properties of silicon doped n-indium selenide

    Hall effect and resistivity measurements in silicon doped indium selenide (InSe), from 7K to 500K, are reported. Results are interpreted through a model, previously proposed for tin doped InSe, that takes into...

    J. Riera, A. Segura, A. Chevy in Applied Physics A (1992)

  2. No Access

    Article

    Positrons and electron-irradiation induced defects in the layered semiconductor InSe

    The positron annihilation characteristics of the layered semiconductor InSe have been investigated. No evidence for low temperature positron trap** is found in as-grown and heavily deformed InSe. The tempera...

    R. M. de la Cruz, R. Pareja, A. Segura, P. Moser, A. Chevy in Applied Physics A (1992)

  3. No Access

    Article

    Deep level transient spectroscopy measurement on tin-doped n-indium selenide

    Deep level transient spectroscopy measurements in indium selenide samples doped with different amounts of tin are reported. Three tin-related electron traps have been detected with activation energies for emis...

    B. Marí, A. Segura, A. Casanovas, A. Chevy in Applied Physics A (1991)

  4. No Access

    Article

    Carrier scattering mechanisms in P-type indium selenide

    Carrier scattering mechanisms in p-indium selenide are investigated by means of the temperature dependence of the Hall mobility (160–500 K) and thermopower (200–300 K). An anomalous behaviour of the Hall volta...

    A. Segura, C. Martinez-Tomás, A. Casanovas, A. Cantarero… in Applied Physics A (1989)

  5. No Access

    Article

    Excitonic absorption and Urbach's tail in bismuth sulfide single crystals

    The absorption coefficient of bismuth sulfide single crystals has been measured through more than four orders of magnitude and in the range of energies from 1.25 to 1.70 eV. A detailed study as a function of t...

    A. Cantarero, J. Martinez-Pastor, A. Segura, A. Chevy in Applied Physics A (1988)

  6. No Access

    Article

    Tin-related shallow donor in indium selenide

    Hall-effect measurements in indium selenide samples doped with different amounts of tin are reported. The temperature dependance of free-electron concentration is interpreted through a single-donor single-acce...

    B. Marí, A. Segura, A. Chevy in Applied Physics A (1988)

  7. No Access

    Article

    Acceptor levels in indium selenide. An investigation by means of the Hall effect, deep-level-transient spectroscopy and photoluminescence

    Acceptor levels related to I, II, IV, and V group impurities in indium selenide are studied by means of the Hall effect, deep-level-transient spectroscopy (DLTS) and photoluminescence. Activation energies for ...

    A. Segura, M. C. Martínez-Tomás, B. Marí, A. Casanovas, A. Chevy in Applied Physics A (1987)

  8. No Access

    Article

    Investigation of impurity levels inn-type indium selenide by means of Hall effect and deep level transient spectroscopy

    We report the results of Hall effect and deep-level-transient-spectroscopy measurements onn-type indium selenide samples cleaved from non-intentionally doped material and from chlorine, tin, gallium sulphide or o...

    A. Segura, K. Wünstel, A. Chevy in Applied Physics A (1983)