14 Result(s)
within
English
Materials Science
**dong Jiang
-
Article
Open AccessOrigins of 1/f noise in nanostructure inclusion polymorphous silicon films
In this article, we report that the origins of 1/f noise in pm-Si:H film resistors are inhomogeneity and defective structure. The results obtained are consistent with Hooge's formula, where the noise parameter, α
-
Article
Open AccessSilicon nanowires prepared by electron beam evaporation in ultrahigh vacuum
One-dimensional silicon nanowires (SiNWs) were prepared by electron beam evaporation in ultrahigh vacuum (UHV). The SiNWs can be grown through either vapor–liquid-solid (VLS) or oxide-assisted growth (OAG) mec...
-
Article
Open AccessBlack silicon with self-cleaning surface prepared by wetting processes
This paper reports on a simple method to prepare a hydrophobic surface on black silicon, which is fabricated by metal-assisted wet etching. To increase the reaction rate, the reaction device was placed in a he...
-
Article
Open AccessHigh-separation efficiency micro-fabricated multi-capillary gas chromatographic columns for simulants of the nerve agents and blister agents
To achieve both high speed and separation efficiency in the separation of a mixture of nerve and blister agent simulants, a high-aspect-ratio micro-fabricated multi-capillary column (MCC, a 50-cm-long, 450-μm-...
-
Article
Open AccessNear-infrared optical absorption enhanced in black silicon via Ag nanoparticle-induced localized surface plasmon
Due to the localized surface plasmon (LSP) effect induced by Ag nanoparticles inside black silicon, the optical absorption of black silicon is enhanced dramatically in near-infrared range (1,100 to 2,500 nm). ...
-
Article
Open AccessOrdered and ultrathin reduced graphene oxide LB films as hole injection layers for organic light-emitting diode
In this paper, we demonstrated the utilization of reduced graphene oxide (RGO) Langmuir-Blodgett (LB) films as high performance hole injection layer in organic light-emitting diode (OLED). By using LB techniqu...
-
Article
Open AccessFlexible conducting polymer/reduced graphene oxide films: synthesis, characterization, and electrochemical performance
In this paper, we demonstrate the preparation of a flexible poly (3,4-ethylenedioxythiophene) -poly (styrenesulfonate)/reduced graphene oxide (PEDOT-PSS/RGO) film with a layered structure via a simple vacuum f...
-
Article
Open AccessThe Enhanced Light Absorptance and Device Application of Nanostructured Black Silicon Fabricated by Metal-assisted Chemical Etching
We use metal-assisted chemical etching (MCE) method to fabricate nanostructured black silicon on the surface of C-Si. The Si-PIN photoelectronic detector based on this type of black silicon shows excellent dev...
-
Article
Open AccessSpiral Antenna-Coupled Microbridge Structures for THz Application
Bolometer sensor is a good candidate for THz imaging due to its compact system, low cost, and wideband operation. Based on infrared microbolometer structures, two kinds of antenna-coupled microbridge structure...
-
Article
Open AccessRecombination Pathways in Green InGaN/GaN Multiple Quantum Wells
This paper reports the transient photoluminescence (PL) properties of an InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) with green emission. Recombination of localized excitons was proved to ...
-
Article
Open AccessFrequency Modulation and Absorption Improvement of THz Micro-bolometer with Micro-bridge Structure by Spiral-Type Antennas
Antenna-coupled micro-bridge structure is proven to be a good solution to extend infrared micro-bolometer technology for THz application. Spiral-type antennas are proposed in 25 μm × 25 μm micro-bridge structu...
-
Article
Open AccessEnhanced near-infrared absorber: two-step fabricated structured black silicon and its device application
Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its high reflectance and band gap limit. In this study, two-step process, deep reac...
-
Article
Open AccessAnalog Switching and Artificial Synaptic Behavior of Ag/SiOx:Ag/TiOx/p++-Si Memristor Device
In this study, by inserting a buffer layer of TiOx between the SiOx:Ag layer and the bottom electrode, we have developed a memristor device with a simple structure of Ag/SiOx:Ag/TiOx/p++-Si by a physical vapor de...
-
Article
Open AccessA Monoclinic V1-x-yTixRuyO2 Thin Film with Enhanced Thermal-Sensitive Performance
Preparing the thermal-sensitive thin films with high temperature coefficient of resistance (TCR) and low resistivity by a highly compatible process is favorable for increasing the sensitivity of microbolometer...
