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    Investigations on Transport Properties of Poly-silicon Nanowire Transistors Featuring Independent Double-Gated Configuration Under Cryogenic Ambient

    Transport properties of poly-Si nanowire transistors, which were fabricated by a simple and low-cost method, are examined in this chapter. The proposed device features two independent gates and thus allows mor...

    Wei-Chen Chen, Horng-Chih Lin in Toward Quantum FinFET (2013)