Page
%P
![Loading...](https://link.springer.com/static/c4a417b97a76cc2980e3c25e2271af3129e08bbe/images/pdf-preview/spacer.gif)
-
Chapter
Damage-Free Atomic-Scale Etching and Surface Enhancements by Electron-Enhanced Reactions: Results and Simulations
Ion-enhanced dry etch methods inflict “etch process damage” through surface ion bombardment. These inherent limitations in conventional dry etch methods create potential roadblocks to achieving device properti...