5 Result(s)
within
Chapter
D. Bimberg
Condensed Matter Physics
Solid State Physics
-
Chapter
MBE Growth of (In,Ga)As Self-Assembled Quantum Dots for Optoeletronic Applications
Quantum dot (QD) arrays are considered now to be very promising in semiconductor laser applications. Single quantum dot represents a potential quantum well in which the carrier motion is quantised in all three...
-
Chapter
High Injection Effects in GaAs/AlGaAs Quantum Wells: Spontaneous Recombination and Band-Gap Renormalization
In this paper, we report a feasible experimental approach to high injection effects in semiconductor light sources. We show that by measuring the junction voltage, the differential lifetime, and the relative o...
-
Chapter
4He and 3He Calorimetric Absorption Spectroscopy: Principles and Results on InGaAs/AlInAs Quantum Wells and Fe in InP and GaAs
A novel absorption technique, Calorimetric Absorption Spectroscopy (CAS), is compared to other photothermally based spectroscopic methods. CAS is more sensitive than any other low-temperature absorption techni...
-
Chapter
The Interface as a Design Tool for Modelling of Optical and Electronic Properties of Quantum Well Devices
The atomic scale crystallographic and chemical properties of interfaces between semiconductors are of decisive importance for the performance of novel generations of electronic and photonic devices and are in ...
-
Chapter and Conference Paper
SIMS Investigation of p-n Junction Quality in Ion Implanted cw Laser Annealed Silicon
It is well established that silicon samples amorphized by ion implantation can be recrystallized by cw laser annealing [1,2]. The damaged surface layer is reconstructed by laser induced solid phase epitaxy [2,...
