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  1. No Access

    Chapter

    Entropy Effects in the Self-Organized Formation of Nanostructures

    A finite-temperature thermodynamic theory is developed for arrays of submonolayer islands in heteroepitaxial systems. It is established that the temperature dependence of the average island size at temperature...

    V. A. Shchukin, N. N. Ledentsov, D. Bimberg in Atomistic Aspects of Epitaxial Growth (2002)

  2. No Access

    Chapter and Conference Paper

    Quantum dots for GaAs-based surface emitting lasers at 1300 nm

    InGaAs quantum dots (QD's) on GaAs substrate have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for the use in vertical cavity surface emitting laser di...

    M. Grundmann, N. N. Ledentsov, F. Hopfer… in Advances in Solid State Physics 40 (2000)

  3. No Access

    Chapter and Conference Paper

    Diode lasers based on quantum dots

    Semiconductor diode lasers are presented whose active medium consists of quantum dots (QDs). Laser operation is based on zero-dimensionally localized carriers. High density arrays of uniform QDs are fabricated...

    M. Grundmann, F. Heinrichsdorff, N. N. Ledentsov… in Advances in Solid State Physics 38 (1999)

  4. No Access

    Chapter

    MBE Growth of (In,Ga)As Self-Assembled Quantum Dots for Optoeletronic Applications

    Quantum dot (QD) arrays are considered now to be very promising in semiconductor laser applications. Single quantum dot represents a potential quantum well in which the carrier motion is quantised in all three...

    V. M. Ustinov, A. E. Zhukov, A. Yu. Egorov… in Devices Based on Low-Dimensional Semicondu… (1996)

  5. No Access

    Chapter

    Carrier Capture and Stimulated Emission in Quantum Wire Lasers Grown on Nonplanar Substrates

    The excess carrier capture and stimulated emission processes in GaAs/AlGaAs quantum wires (QWRs) grown by organometallic chemical vapor deposition on nonplanar substrates are discussed. These crescent shaped w...

    E. Kapon, M. Walther, D. M. Hwang, E. Colas… in Phonons in Semiconductor Nanostructures (1993)

  6. No Access

    Chapter

    High Injection Effects in GaAs/AlGaAs Quantum Wells: Spontaneous Recombination and Band-Gap Renormalization

    In this paper, we report a feasible experimental approach to high injection effects in semiconductor light sources. We show that by measuring the junction voltage, the differential lifetime, and the relative o...

    N. Kirstaedter, E. H. Böttcher, D. Bimberg, C. Harder… in Granular Nanoelectronics (1991)

  7. No Access

    Chapter

    4He and 3He Calorimetric Absorption Spectroscopy: Principles and Results on InGaAs/AlInAs Quantum Wells and Fe in InP and GaAs

    A novel absorption technique, Calorimetric Absorption Spectroscopy (CAS), is compared to other photothermally based spectroscopic methods. CAS is more sensitive than any other low-temperature absorption techni...

    D. Bimberg, T. Wolf, J. Böhrer in Advances in Nonradiative Processes in Solids (1991)

  8. No Access

    Chapter

    The Interface as a Design Tool for Modelling of Optical and Electronic Properties of Quantum Well Devices

    The atomic scale crystallographic and chemical properties of interfaces between semiconductors are of decisive importance for the performance of novel generations of electronic and photonic devices and are in ...

    J. Christen, D. Bimberg in Band Structure Engineering in Semiconductor Microstructures (1989)

  9. No Access

    Chapter and Conference Paper

    Recombination Heating Induced Delayed Energy Relaxation of Nonequilibrium Charge Carriers

    Recombination of nonequilibrium carriers leads to an increase of the temperature of the remaining carrier gas, if the recombination rate decreases with increasing energy and/or degenerate statistics applies. T...

    D. Bimberg, J. Mycielski in Proceedings of the 17th International Conf… (1985)

  10. No Access

    Chapter and Conference Paper

    SIMS Investigation of p-n Junction Quality in Ion Implanted cw Laser Annealed Silicon

    It is well established that silicon samples amorphized by ion implantation can be recrystallized by cw laser annealing [1,2]. The damaged surface layer is reconstructed by laser induced solid phase epitaxy [2,...

    M. Maier, D. Bimberg, H. Baumgart, F. Phillippi in Secondary Ion Mass Spectrometry SIMS III (1982)