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High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation
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Article
2.29-kV GaN-based double-channel Schottky barrier diodes on Si substrates with high VON uniformity
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Article
Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs
In this study, we investigate heavy ion irradiation effects on commercial 650 V p-GaN normally-off HEMTs. Ge and Cl ions are used to irradiate the GaN devices in the experiments. Ge and Cl ion beam irradiation...
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Article
Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate
In this paper, Schottky-drain reverse-blocking AlN/AlGaN HEMTs with drain field plate (FP) have been investigated by Silvaco-ATLAS tools. For HEMTs without FP, with the increase of Al mole fraction in AlGaN ch...