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  1. No Access

    Article

    A Multi-Electrode System for the Implementation of Solid-State Quantum Devices Based on a Disordered System of Dopant Atoms in Silicon

    In this work, we present a nanoscale solid state structure, which is a 3D-array of tunnel-coupled arsenic dopants in silicon with a system of metallic electrodes leading to them. The structures of eight metal ...

    S. A. Dagesyan, S. Yu. Ryzhenkova, I. V. Sapkov… in Moscow University Physics Bulletin (2020)

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    Article

    A Method for Reconstructing the Potential Profile of Surfaces Coated with a Dielectric Layer

    We propose a method of signal amplification for the scanning probe microscope mode, in which the distribution of the surface potential of a sample is measured simultaneously with topography using a local probe...

    I. V. Bozhev, A. S. Trifonov, D. E. Presnov… in Moscow University Physics Bulletin (2020)

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    Article

    Single-Electron Structures Based on Solitary Dopant Atoms of Arsenic, Phosphorus, Gold, and Potassium in Silicon

    Here we present CMOS compatible fabrication methods and the results of an experimental study of single-atom single-electron transistors made from silicon on insulator and based on various dopant atoms. Transis...

    D. E. Presnov, S. A. Dagesyan, I. V. Bozhev… in Moscow University Physics Bulletin (2019)

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    Article

    A Coulomb Blockade in a Nanostructure Based on Single Intramolecular Charge Center

    A novel technique for the production of metal electrodes of a nanotransistor with a nanogap less than 4 nm between them is developed on the basis of controlling the electromigration of previously suspended nan...

    V. R. Gaydamachenko, E. K. Beloglazkina, R. A. Petrov… in Moscow University Physics Bulletin (2018)

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    Article

    Nanometer Scale Lithography with Evaporated Polystyrene

    We report on a fabrication method of extremely small metallic nanostructures which uses commercially available polystyrene with low molecular weight as a negative resist for electron-beam lithography. The samp...

    G. A. Zharik, S. A. Dagesyan, E. S. Soldatov… in Moscow University Physics Bulletin (2017)

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    Article

    Single-electron transistor with an island formed by several dopant phosphorus atoms

    We present the results of an experimental study of electron transport through individual phosphorus dopants implanted into a silicon crystal. We developed an original technique for single-electron transistor f...

    S. A. Dagesyan, V. V. Shorokhov, D. E. Presnov… in Moscow University Physics Bulletin (2017)