64 Result(s)
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Article
N. T. Bagraev
English
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Article
Ultrashallow p +-n junctions in silicon (100): Electron-beam diagnostics of the surface zone
Ultrashallow p +-n junctions formed in silicon (100) under nonequilibrium impurity diffusion conditions are analyzed by electron-beam diagnostics of the surface zone using a probe of low-to medium-energy electron...
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Article
Ultrashallow p +-n junctions in Si(111): Electron-beam diagnostics of the surface region
Ultrashallow p +-n junctions fabricated in Si(111) are investigated by low-and intermediateenergy electron-beam probing of the surface region in order to determine how the crystallographic orientation of the sili...
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Article
Electron-beam-induced conductivity in self-organized silicon quantum wells
Electron-beam diagnostics are used to study self-organized quantum wells which form within ultrashallow silicon p +-n junctions under the conditions of nonequilibrium boron diffusion. The energy dependence and cu...
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Article
Radiation-induced conduction in quantum-confined p +-n silicon junctions
Electron-beam diagnostics are used to study the radiation-induced conduction of supershallow p +-n silicon junctions obtained by nonequilibrium boron diffusion. Current-voltage (I–V) characteristics of radiation-...
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Article
Charge carrier interference in modulated quantum wires
Quantized conductance as a function of the charge carrier energy in modulated quantum wires is investigated for the first time. The energy dependence of the coefficient of transit through a modulated quantum w...
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Article
Ballistic conductance of a quantum wire at finite temperatures
The temperature-dependent ballistic conductance of a quantum wire is calculated without consideration of carrier scattering. The contribution to the conductance (G) from size-quantization subbands with E ...
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Article
Self-ordered microcavities embedded in ultrashallow silicon p-n junctions
Scanning tunneling spectroscopy was used to obtain topographic images of the (100) surface of ultrashallow diffusion profiles of boron in silicon. This method makes it possible to study the influence of fluctu...
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Charge carrier interference in one-dimensional semiconductor rings
Interference of the ballistic charge carriers in one-dimensional (1D) rings formed by two quantum wires in the self-ordered silicon quantum wells was investigated for the first time. The charge carrier transmi...
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Spontaneous spin polarization of electrons in quantum wires
The quantum conductance staircase of the one-dimensional (1D) channel is analyzed for a weak filling of the lower 1D subbands, when the exchange electron-electron interaction of carriers dominates over their k...
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Article
Quantized conductance in silicon quantum wires
The results of studying the quantum-mechanical staircase for the electron and hole conductance of one-dimensional channels obtained by the split-gate method inside self-assembled silicon quantum wells are repo...
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Article
Self-compensation of metastable centers in semiconducting chalcogenide glasses
The temperature dependences of magnetic susceptibility are employed for the first time to study the self-compensation of metastable centers with negative correlation energy in the As2S3 chalcogenide glass. The on...
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Article
Spin Polarization in Low-Density Quantum Wires
We present the results of the theoretical analysis of quasi one-dimensional electron gas within the Hartree–Fock approximation. The ground state energy for full polarized and unpolarized states is calculated at T
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Article
Spin depolarization and a metal-insulator transition in a two-dimensional system in zero magnetic field
The conditions for spontaneous spin polarization in a two-dimensional system in a zero magnetic field are considered in the case of a partial filling of the lower quantum-well subbands when the energy of excha...
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Article
Spin depolarization in spontaneously polarized low-dimensional systems
Conditions for the appearance of a spontaneous spin polarization in low-dimensional systems in zero magnetic field are analyzed for the case of low occupation of the lowest quantum-confinement subbands, when t...
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Article
Delta-Do** of Monocrystalline Semiconductors by Al and Sb Implantation Using FIB Resistless Lithography
The potential is investigated of FIB lithography for implantation delta-do** in order to produce desired arrangements of quantum wires and dots. Both raster and vector scanning are considered. The results ar...
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Article
p +-Si-n-CdF2 heterojunctions
Boron diffusion and the vapor-phase deposition of silicon layers are used to prepare ultrashallow p +-n junctions and p +-Si-n-CdF2 heterostructures on an n-CdF2 crystal surface. Forward portions of the I–V chara...
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Article
Local tunneling spectroscopy of silicon nanostructures
The recharging of many-hole and few-electron quantum dots under the conditions of the ballistic transport of single charge carriers inside self-assembled quantum well structures on a Si (100) surface are studi...
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Article
Magnetism of III–V crystals doped with rare-earth elements
The procedure of measuring static magnetic susceptibility is used for the study of local ordering in III–V crystals containing rare-earth dopants. The dependences of the static magnetic susceptibility on the t...
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Article
Magnetic and optical properties of ytterbium-doped indium phosphide crystals
The intimate relation connecting the magnetic and optical properties of ytterbium-doped indium phosphide is studied under the conditions of local magnetic ordering and compensation of spin correlations by elec...
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Article
Evaluation of focused O+ ion beams as a tool for making resist masks by reactive etching
A method of reactive etching is proposed in which focused 100-eV O+ ion beams are used for making organic-resist masks 12–24 nm thick with nanometer-sized apertures. Focused-ion-beam and ion-projection-lithograph...
