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Article
The Influence of Contact Composition, Pretreatment, and Annealing Gas on the Ohmic Behavior of Ti/Al-Based Ohmic Contacts to n-Al 0.4Ga 0.6N
As the group III nitride semiconductor technology matures, an increasing number of devices are being fabricated with high Al fraction AlGaN. In this study, ohmic behavior is achieved using Ti/Al/Pt/Au contacts...
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Article
Phase equilibria in transition metal Al-Ga-N systems and thermal stability of contacts to AlGaN
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Article
Phase equilibria in transition metal Al-Ga-N systems and thermal stability of contacts to AlGaN
As a first step in predicting the phase equilibria in TM-Al-Ga-N systems, where TM denotes a transition metal from the first three transition series, phase equilibria are calculated in the TM-Al-N systems, and...
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Article
Interface Stress and An Apparent Negative Poisson’s Ratio in Ag/Ni Multilayers
By use of dc-magnetron sputtering, (111) textured Ag/Ni multilayered thin films were deposited with nominal bilayer repeat lengths ranging from 2 nm to 250 nm. Bulk and interface stresses were obtained from X-...