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Article
Spark plasma sintering and decomposition of the Y3NbO7:Eu phase
The spark plasma sintering (SPS) of Eu3+-doped Y3NbO7 niobate phase was investigated to obtain dense ceramics. Although SPS allowed obtaining high-density ceramics, decomposition of the niobate phase occurred at ...
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Article
Comparing guided modal properties of surface waves along single- and double-negative indexed slab waveguides
The guided dispersion characteristics of the fundamental symmetric and asymmetric modes of surface waves along single- and double-negative indexed slab waveguides are investigated, and a comparative analysis m...
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Article
Optical guided dispersions and subwavelength transmissions in dispersive plasmonic circular holes
The light transmission through a dispersive plasmonic circular hole is numerically investigated with an emphasis on its subwavelength guidance. For a better understanding of the effect of the hole diameter on ...
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Article
Leakage Current Behaviors of Ba0.5Sr0.5TiO3 Thin Films on Pt, RuO2, and Pt/RuO2 Bottom Electrodes
Ba0.5Sr0.5TiO3 thin films were grown by rf-magnetron sputtering. Pt and RuO2 films were used as bottom electrodes of the Ba0.5Sr0.5TiO3 thin films. Further, a Pt/RuO2 hybrid electrode was adopted as an electrode ...
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Article
Effect of addition of the CuO-Fe2O3 system on the electromagnetic wave absorbing properties of sintered ferrite
The effects of the addition of the CuO-Fe2O3 system as a liquid former on the microstructure and electromagnetic wave absorbing property of sintered Ni-Zn ferrite were investigated. The CuO-Fe2O3 system, a spinel...
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Article
Preparation and Microstructural Characterization of Ferroelectric Thin Film PbTiO3 on Si, MgO, and Sapphire Deposited by DC Reactive Multitarget Co-Sputtering.
PbTiO3 thin films on Si (100) plane were prepared by the DC reactive multitarget cosputtering technique. The film composition and structure were examined as a function of deposition parameters. The crystal struct...
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Article
The direct bonding between copper and MgO-doped Si3N4
An application of direct bonding method for copper to silicon nitride (Si3N4) joining was investigated. Si3N4 was sintered with 5wt% MgO at 1700 ° C for 30 min in nitrogen atmosphere, and oxidized at various temp...