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Article
Microstructure Analysis of Silicon Nanowalls: Insights from Positron Beam Doppler Broadening Measurements
Silicon nanowalls atop the (100) – oriented boron doped P-type (1–10 Ω-cm) single crystalline silicon wafers were prepared using a metal assisted chemical etching route for different durations 1, 5, 15, and 30...
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Article
Electrochemical studies on wafer-scale synthesized silicon nanowalls for supercapacitor application
Silicon-based supercapacitors are highly essential for the utilization of supercapacitor technology in consumer electronics, owing to their on-chip integration with the well-established complementary metal–oxi...