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Article
Magnetic domain structures and magnetotransport properties in Co-Ag granular thin films
The magnetic microstructures and magnetotransport properties in granular CoxAg1-x films with 17%≤x≤62% were studied. Magnetic force microscopy (MFM) observations showed the presence of magnetic stripe domains in ...
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Article
Superparamagnetic Behavior of Granular Co-C Films Consisting of Nanocrystalline Cobalt Encapsulated in Carbon
Nanocomposite Co-C thin films of about 15 nm thick were prepared by pulsed filtered vacuum arc deposition. The films were characterized by x-ray photoelectron spectroscopy, non-Rutherford backscattering spectr...
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Article
Formation of Gallium Nitride (GaN) Transition Layer by Plasma Immersion Ion Implantation and Rapid Thermal Annealing
Recent advances in the preparation of gallium nitride (GaN) and related compounds have made possible the production of blue semiconductor laser. Conventional preparation involves growing GaN thin films on latt...
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Article
Structural and optical properties of nitrogen-containing tetrahedral amorphous carbon films
Tetrahedral amorphous carbon films (ta-C) and nitrogen-containing ta-C films have been prepared using a magnetic-filtered plasma-deposition method in pure Ar, and Ar with N2 ambient, respectively. The structural ...
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Article
Ain Thin Films Prepared by Reactive Ion Beam Coating
Aluminum Nitride (AIN) is a promising material for a variety of technological applications because it has many exceptional properties, such as wide band gap (WBG) and negative electron affinity (NEA). AIN thin...
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Article
GMR Effect and Properties of CoAg Granular Films Formed by Implantation with a Metal Vapor Vacuum Arc Ion Source
Cobalt-silver granular thin films were formed by Co implantation into Ag using a metal vapor vacuum arc (MEVVA) ion source. The magnetic field dependence and the temperature variation of the giant magnetoresis...
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Article
Measurement of Bonding Stress in Silicon High Power Device Structures by Infrared Photoelasticity Method
Silicon high-power devices are commonly bonded to Mo electrodes using Al films. Bonding stress will inevitably be introduced into the Si substrate by such a process. In this work, the infrared (IR) photoelasti...
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Article
Crystallization of ion-beam-synthesized SiC layer by thermal annealing
at temperatures ranging from 600 to 1200 °C for 2 h. Rutherford backscattering spectrometry (RBS) analysis revealed carbon distribution and the formation of an SiC layer. Infrared spectroscopy (IR) exhibited ...
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Article
Esr of Purified Carbon Nanotubes Produced Under Different Helium Pressures
Carbon nanotubes were prepared by the dc arc-discharge method under a controlled helium pressure ranging from 10 to 80 kPa and subsequently purified by oxidation in air. The purified carbon nanotubes were obse...
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Article
Characterization of Carbon Nitride Films Prepared by Magnetic Filtered Plasma Deposition
Carbon nitride films prepared by magnetic filtered plasma deposition were characterized using Fourier transform infrared (FTIR) absorption and X-ray photoelectron spectroscopy (XPS). Characteristic bands corre...
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Article
Magnetoresistance Effects in Granular Thin Layers Formed by High Dose Iron Implantation Into Silicon
High dose iron implantation into silicon substrates has been performed with a metal vapor vacuum arc ion source to doses ranging from 5x1016 to 2x1017 cm-2 at various beam current densities. The magnetoresistance...
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Article
Phase Transformation and Ion Beam Induced Crystallization in SiC Layers Formed by Mevva Implantation of Carbon into Silicon
Buried SiC layers were synthesized by carbon implantation into silicon with a metal vapor vacuum arc ion source under various implantation and annealing conditions. The infrared absorption spectra of these sam...
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Article
Formation and Characteristics of CoSi2 Layers Synthesized by Mevva Implantation
Ion beam synthesis of CoSi2 layers in Si by NIEVVA (Metal Vapor Vacuum Arc) implantation has been performed under various conditions. The formation and characteristics of these CoSi2 layers have been studied by X...
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Article
Stress Distribution in Si Under Patterned thin Film Structures
We have employed the infrared photoelasticity (PE) method to study the stress distribution in Si substrates under patterned thin film structures such as thermal oxide layers partially covered by metal films an...
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Article
Ion Beam Synthesis of SiC/Si Heterostructures by MEVVA Implantation
Ion beam synthesis of SiC/Si heterostructures was performed by MIEVVA (metal vapor vacuum arc) implantation under various implantation and annealing conditions. The implanted SiC/Si heterostructures were chara...
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Article
Formation and Characteristics of CoSi2 Layers Synthesized by Mevva Implantation
Ion beam synthesis of CoSi2 layers in Si by MEVVA (Metal Vapor Vacuum Arc) implantation has been performed under various conditions. The formation and characteristics of these CoSi2 layers have been studied by XT...
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Article
Ion Beam Synthesis of SiC/Si Heterostructures by Mevva Implantation
Ion beam synthesis of SiC/Si heterostructures was performed by MEVVA (metal vapor vacuum arc) implantation under various implantation and annealing conditions. The implanted SiC/Si heterostructures were charac...
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Article
Characterization of Rapid Nitrided Ultrathin SiO2 Films By XPS and SCS
Ultrathin SiO2 dielectric layers of thickness less than 100Å on silicon substrates have been prepared by dry oxidation and rapid thermal nitirdation (RTN). In this study, X-ray photoelectron spectroscopy and surf...
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Article
Electrical Characteristics of COSi2 Layers Formed by Mew a Implantation of Co into Si
High dose Co implantation into Si has been performed with a metal vapor vacuum arc (MEVVA) ion source at an extraction voltage of 70 kV to doses from 8×1016 to 6×1017ions cm−2 at substrate temperatures (Ts) in th...
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Article
Crystalline Grains and Electrical Properties of Vacuum-Evaporated SnO2 Thin Films
We have studied grain growth and electrical properties of polycrystalline tin oxide (SnO2) thin films prepared by vacuum-evaporation with a two-step process: evaporation of tin metal films and then oxidation of t...