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  1. No Access

    Article

    Features of the electroluminescence spectra of quantum-confined silicon p +-n heterojunctions in the infrared spectral region

    The results of studying the characteristics of optical emission in various regions of quantum-confined silicon p +-n heterojunctions heavily doped with boron are analyzed. The results obta...

    N. T. Bagraev, L. E. Klyachkin, R. V. Kuzmin, A. M. Malyarenko… in Semiconductors (2013)

  2. No Access

    Article

    On the electrically detected cyclotron resonance of holes in silicon nanostructures

    The cyclotron resonance in semiconductor nanostructures is electrically detected for the first time without an external cavity, a source, and a detector of microwave radiation. An ultranarrow p-Si quantum well on...

    N. T. Bagraev, D. S. Gets, E. Yu. Danilovsky, L. E. Klyachkin… in Semiconductors (2013)

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    Infrared luminescence from silicon nanostructures heavily doped with boron

    Intense highly polarized radiation from silicon nanostructures heavily doped with boron to 5 × 1021 cm−3 is studied as a function of temperature, forward current, and an additional lateral electric field. The fea...

    N. T. Bagraev, L. E. Klyachkin, R. V. Kuzmin, A. M. Malyarenko… in Semiconductors (2012)

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    Formation of (Ga,Mn)As nanowires and study of their magnetic properties

    The molecular-beam epitaxy technique is used to synthesize arrays of (Ga,Mn)As nanowire crystals on a GaAs (111)B surface in the growth-temperature range 480–680°C. It is established that the formation of (Ga,...

    A. D. Bouravleuv, G. E. Cirlin, V. V. Romanov, N. T. Bagraev… in Semiconductors (2012)

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    Article

    The de Haas-van Alphen effect in nanostructures of cadmium fluoride

    Measurements of the field and temperature dependences of static magnetic susceptibility demonstrate de Haas-van Alphen oscillations at high temperatures and low magnetic fields in sandwich nanostructures, whic...

    N. T. Bagraev, E. S. Brilinskaya, E. Yu. Danilovskii, L. E. Klyachkin… in Semiconductors (2012)

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    Spin interference of holes in silicon nanosandwiches

    Spin-dependent transport of holes is studied in silicon nanosandwiches on an n-Si (100) surface which are represented by ultranarrow p-Si quantum wells confined by δ-barriers heavily doped with boron. The measure...

    N. T. Bagraev, E. Yu. Danilovskii, L. E. Klyachkin, A. M. Malyarenko… in Semiconductors (2012)

  7. No Access

    Article

    Shubnikov-de-Haas and de-Haas-van-Alphen oscillations in silicon nanostructures

    The dependences of the longitudinal resistance and the static magnetic susceptibility on the magnetic field applied perpendicularly to the plane of an ultranarrow silicon quantum well confined by δ barriers he...

    N. T. Bagraev, E. S. Brilinskaya, D. S. Gets, L. E. Klyachkin… in Semiconductors (2011)

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    Article

    Quantum spin Hall effect in nanostructures based on cadmium fluoride

    Tunneling current-voltage (I-V) characteristics and temperature dependences of static magnetic susceptibility and specific heat of the CdB x F2 − x /p-CdF

    N. T. Bagraev, O. N. Guimbitskaya, L. E. Klyachkin, A. A. Koudryavtsev… in Semiconductors (2010)

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    Superconducting properties of silicon nanostructures

    Superconducting properties of silicon sandwich nanostructures on the n-Si (100) surface, which represent the ultra-narrow p-type silicon quantum wells confined by heavily boron-doped δ barriers, manifest themselv...

    N. T. Bagraev, L. E. Klyachkin, A. A. Koudryavtsev, A. M. Malyarenko… in Semiconductors (2009)

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    Article

    Quantum supercurrent and Andreev reflection in silicon nanostructures

    The tunneling spectroscopy is used for studying the hole transport in a sandwich nanostructure of the superconductor-ultra-narrow-self-assembled-p-silicon-quantum-well (Si-QW)-superconductor type on the n-Si (100...

    N. T. Bagraev, L. E. Klyachkin, A. A. Koudryavtsev, A. M. Malyarenko… in Semiconductors (2009)

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    Article

    Quantum Hall effect in (cadmium flouride)-based nanostructures

    Shubnikov-de Haas oscillations and a ladder of quantum steps in the Hall resistance were observed in a p-CdF2 quantum well confined by δ-like barriers for CdB x F2−x ...

    N. T. Bagraev, O. N. Gimbitskaya, L. E. Klyachkin, A. M. Malyarenko… in Semiconductors (2009)

  12. No Access

    Article

    Spin transistor based on cadmium fluoride nanostructures

    A study of CdB x F2 − x /p-CdF2/CdB x F2 − x planar sandwich structures fabricated on n-CdF2 cr...

    N. T. Bagraev, O. N. Gimbitskaya, L. E. Klyachkin, A. M. Malyarenko… in Semiconductors (2009)

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    Article

    Magnetism of III–V crystals doped with rare-earth elements

    The procedure of measuring static magnetic susceptibility is used for the study of local ordering in III–V crystals containing rare-earth dopants. The dependences of the static magnetic susceptibility on the t...

    N. T. Bagraev, V. V. Romanov in Semiconductors (2005)

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    Local tunneling spectroscopy of silicon nanostructures

    The recharging of many-hole and few-electron quantum dots under the conditions of the ballistic transport of single charge carriers inside self-assembled quantum well structures on a Si (100) surface are studi...

    N. T. Bagraev, A. D. Bouravlev, L. E. Klyachkin, A. M. Malyarenko… in Semiconductors (2005)

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    Article

    p +-Si-n-CdF2 heterojunctions

    Boron diffusion and the vapor-phase deposition of silicon layers are used to prepare ultrashallow p +-n junctions and p +-Si-n-CdF2 heterostructures on an n-CdF2 crystal surface. Forward portions of the I–V chara...

    N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko, A. I. Ryskin… in Semiconductors (2005)

  16. No Access

    Article

    Spin depolarization in spontaneously polarized low-dimensional systems

    Conditions for the appearance of a spontaneous spin polarization in low-dimensional systems in zero magnetic field are analyzed for the case of low occupation of the lowest quantum-confinement subbands, when t...

    I. A. Shelykh, N. T. Bagraev, L. E. Klyachkin in Semiconductors (2003)

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    Article

    Spin Polarization in Low-Density Quantum Wires

    We present the results of the theoretical analysis of quasi one-dimensional electron gas within the Hartree–Fock approximation. The ground state energy for full polarized and unpolarized states is calculated at T

    I. A. Shelykh, N. T. Bagraev, V. K. Ivanov, L. E. Klyachkin in Journal of Superconductivity (2003)

  18. No Access

    Article

    Quantized conductance in silicon quantum wires

    The results of studying the quantum-mechanical staircase for the electron and hole conductance of one-dimensional channels obtained by the split-gate method inside self-assembled silicon quantum wells are repo...

    N. T. Bagraev, A. D. Buravlev, L. E. Klyachkin, A. M. Malyarenko… in Semiconductors (2002)

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    Article

    Spontaneous spin polarization of electrons in quantum wires

    The quantum conductance staircase of the one-dimensional (1D) channel is analyzed for a weak filling of the lower 1D subbands, when the exchange electron-electron interaction of carriers dominates over their k...

    I. A. Shelykh, N. T. Bagraev, V. K. Ivanov, L. E. Klyachkin in Semiconductors (2002)

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    Article

    Charge carrier interference in one-dimensional semiconductor rings

    Interference of the ballistic charge carriers in one-dimensional (1D) rings formed by two quantum wires in the self-ordered silicon quantum wells was investigated for the first time. The charge carrier transmi...

    N. T. Bagraev, A. D. Buravlev, V. K. Ivanov, L. E. Klyachkin… in Semiconductors (2000)

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