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Article
Room temperature de Haas–van Alphen effect in silicon nanosandwiches
The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport. The aforesaid also promot...
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Article
Formation of three-dimensional arrays of magnetic clusters NiO, Co3O4, and NiCo2O4 by the matrix method
A method has been proposed for the formation of three-dimensional arrays of isolated magnetic clusters NiO, Co3O4, and NiCo2O4 in the sublattice of pores in the matrix of bulk synthetic opals through a single imp...
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Article
Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime
The sulfur passivation of the semi-insulating GaAs bulk (SI GaAs) grown in an excess phase of arsenic is used to observe the transition from the Coulomb blockade to the weak localization regime at room tempera...
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Article
Defect-related luminescence in silicon p +–n junctions
Ultra-shallow p +–n junctions fabricated by the silicon planar technology based on the short-time nonequilibrium diffusion of boron from the gas phase into n-Si (100) substrates up...
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Article
DNA detection by THz pum**
DNA semiconductor detection and sequencing is considered to be the most promising approach for future discoveries in genome and proteome research which is dramatically dependent on the challenges faced by semi...
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Article
Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructure
We present the first findings of the silicon vacancy related centers identified in the non-irradiated 6H-SiC nanostructure using the electron spin resonance (ESR) and electrically-detected (ED) ESR technique. Thi...
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Article
Optically detected cyclotron resonance in heavily boron-doped silicon nanostructures on n-Si (100)
Electron and hole cyclotron resonance at a frequency of 94 GHz is detected by a change in the intensity of photoluminescence lines whose positions are identical to those of dislocation luminescence lines D1 and D
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Article
Conductance matrix of multiterminal semiconductor devices with edge channels
A method for determining the conductance matrix of multiterminal semiconductor structures with edge channels is proposed. The method is based on the solution of a system of linear algebraic equations based on ...
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Article
Biosensors based on a method for determining the conductance matrix of multiterminal semiconductor nanostructures
A method for determining the conductance matrix is analyzed to study the properties of silicon nanostructures fabricated within Hall geometry on an n-type Si(100) surface as ultra-narrow p-type silicon quantum we...
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Article
Electrically-detected electron paramagnetic resonance of point centers in 6H-SiC nanostructures
The results of investigation of electrically-detected electron paramagnetic resonance (EDEPR) and classical electron paramagnetic resonance (EPR) (X-band) for the identification of shallow and deep boron centers,...
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Article
Features of the electroluminescence spectra of quantum-confined silicon p +-n heterojunctions in the infrared spectral region
The results of studying the characteristics of optical emission in various regions of quantum-confined silicon p +-n heterojunctions heavily doped with boron are analyzed. The results obta...
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Article
On the electrically detected cyclotron resonance of holes in silicon nanostructures
The cyclotron resonance in semiconductor nanostructures is electrically detected for the first time without an external cavity, a source, and a detector of microwave radiation. An ultranarrow p-Si quantum well on...
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Article
Infrared luminescence from silicon nanostructures heavily doped with boron
Intense highly polarized radiation from silicon nanostructures heavily doped with boron to 5 × 1021 cm−3 is studied as a function of temperature, forward current, and an additional lateral electric field. The fea...
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Article
Formation of (Ga,Mn)As nanowires and study of their magnetic properties
The molecular-beam epitaxy technique is used to synthesize arrays of (Ga,Mn)As nanowire crystals on a GaAs (111)B surface in the growth-temperature range 480–680°C. It is established that the formation of (Ga,...
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Article
The de Haas-van Alphen effect in nanostructures of cadmium fluoride
Measurements of the field and temperature dependences of static magnetic susceptibility demonstrate de Haas-van Alphen oscillations at high temperatures and low magnetic fields in sandwich nanostructures, whic...
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Article
Spin interference of holes in silicon nanosandwiches
Spin-dependent transport of holes is studied in silicon nanosandwiches on an n-Si (100) surface which are represented by ultranarrow p-Si quantum wells confined by δ-barriers heavily doped with boron. The measure...
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Article
Shubnikov-de-Haas and de-Haas-van-Alphen oscillations in silicon nanostructures
The dependences of the longitudinal resistance and the static magnetic susceptibility on the magnetic field applied perpendicularly to the plane of an ultranarrow silicon quantum well confined by δ barriers he...
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Article
ONP Spectroscopy of Defects in Silicon
Optical nuclear polarization technique is used to study metastable properties of the gold donor center in silicon. A model of a deep defect’s symmetry changing C 3V ...
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Article
EDESR and ODMR of Impurity Centers in Nanostructures Inserted in Silicon Microcavities
We present the first findings of the new electrically and optically detected magnetic resonance technique [ED electron spin resonance (EDESR) and ODMR], which reveal single point defects in the ultra-narrow si...
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Article
Quantum spin Hall effect in nanostructures based on cadmium fluoride
Tunneling current-voltage (I-V) characteristics and temperature dependences of static magnetic susceptibility and specific heat of the CdB x F2 − x /p-CdF
