-
Article
Studies of an InAs/GaAs Heterojunction by Total-Electron-Yield
Total electron yield (TEY) of an InAs/GaAs heterojunction due to soft x-ray excitation has been studied. This heterojunction was prepared by an overgrowth of a 600 Å InAs layer on a GaAs substrate using molecu...
-
Chapter
Pressure Dependence of Band Offsets in an InAs-GaSb Superlattice
Using magneto-optical methods, we have measured the pressure dependence of the energy difference between subbands in an InAs-GaSb superlattice associated with the GaSb valence and the InAs conduction bands, re...
-
Article
Characterization of Interfacial Roughness in Semiconductor Heterostructures by X-Ray Reflectivity
The reflection of monochromatic x-rays by a layered heterostructure can be utilized as a nondestructive probe to obtain information on the interfacial roughness in the material. Interference between x-rays ref...
-
Chapter and Conference Paper
Electronic Properties of InAs-GaSb and Related AlSb Superlattices
We describe the InAs-GaSb superlattices and quantum wells with emphasis on their transport and optical properties. We include related structures of InAs-AlSb and GaSb-AlSb which are of interest in their own ri...
-
Article
Semiconductor Quantum-Well Heterostructures
Activities in semiconductor heterostructures are reviewed, with focus on the fundamental physics aspects in the quantum regime and with emphasis on recent experimental observations. The GaAs-GaAlAs is used to ...
-
Chapter and Conference Paper
Low-Temperature Magnetotransport in InAs-GaSb Quantum Wells
We report measurements of the magneto and Hall resistance in GaSb-InAs-GaSb heterostructures at magnetic fields up to 28T and temperatures as low as 0.005K. In addition to the quantized Hall effect, extraordin...
-
Chapter and Conference Paper
Fractional Hall Quantization of Two-Dimensional Holes in Gaas-GaAlAs Heterostructures
The quantum Hall effect in two-dimensional electron systems has been reported in a number of heterostructures,1–4 in which the Hall resistance, ρxy =h/νe2, shows plateaus at integral values of ν and the magneto-r...
-
Chapter
Electronic Properties of Semiconductor Heterostructures in a Magnetic Field
This work is devoted to the electronic properties of semiconductor heterostructures under the application of a magnetic field. The focus is on the quantum regime where the heterostructure potential results in ...
-
Chapter and Conference Paper
Resonant Electron Transport in Semiconductor Barrier Structures
We report the transport properties in semiconductor structures consisting of narrow potential wells (GaAs)and barriers (GaA1As). The structures, fabricated by molecular-beamepitaxy, have been evaluated by X-ra...
