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508 Result(s)
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Article
The Mbe Growth of Widegap II-VI Injection Lasers and LEDs
Striking progress in the development of II-VI semiconductor heterostructures, coupled with seminal advances in do**, has very recently led to the first demonstration of blue and blue/green diode lasers opera...
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Article
Investigation of Optimal Photosensor in A-SI:H Liquid Crystal Light Valves
The a-Si:H thin film is used for a photosensor in liquid crystal light valve(LCLV). A lumped element model for the layered a-Si:H LCLV is developed. It has been shown that the dark and photo-resistances of the...
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Article
Ion Implantation to Inhibit Corrosion of Copper
Ion implantation of boron and aluminium is used to passivate copper surfaces. Such a process modifies the copper only near its surface without affecting copper's desirable bulk properties. The present experime...
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Article
Interactions and Stability of Cu on CoSi2
Copper is being investigated for application as multi-level interconnection metal in silicon ultra-large-scale integration (ULSI). On the other hand, COSi2 is being tested for application as contacts in sub-half ...
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Article
The growth of single-crystal fibres directly from source rods made of ultrafine powders
By means of the laser-heated pedestal growth (LHPG) method, the growth of single-crystal fibres directly from source rods made of ultrafine powders is studied in this paper. The ultrafine powders were obtained...
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Surface-enhanced Raman scattering and cyclic voltammetry studies of synergetic effects in the corrosion inhibition of copper by polybenzimidazole and mercaptobenzimidazole at high temperature
The inhibition of copper corrosion by polybenzimidazole and mercaptobenzimidazole at room and high temperature was assessed by in situ surface-enhanced Raman scattering (SERS) and cyclic voltammetry (CV). It was ...
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Article
Structural Nature of Nanocrystalline Silicon
Nanocrystalline silicon (nc-Si:H) films with an average grain size ranging between 2 and 10 nm are prepared in a modified plasma chemical vapor deposition system. X-ray diffraction, transmission electron diffr...
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Article
Heteroepitaxial Growth of Cubic GaN on GaAs(100) by Reactive Nitrogen Source
Zinc-blende GaN has been successfully grown on GaAs(100) by using low-energy nitrogen ions produced by a conventional ion gun to replace the ECR plasma source in the traditional MBE facility for nitride growth...
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Article
Reconstruction of the 3-D Atomic Structure of CoSi2(111) by Photoelectron Holography
We report the use of photoelectron holography for the study of the atomic geometry of the (111) surface of single crystal CoSi2. We employ as a reference wave the Co 3p core electron emitted with a kinetic energy...
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Article
Observation of Reduced Oxidation Rates for Plasma-Assisted CVD Copper Films
Oxidation kinetics of plasma-assisted chemical vapor deposited (PA-CVD) copper films were investigated using Rutherford backscattering spectrometry (RBS). The PA-CVD copper films were deposited using hydrogen ...
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Article
Interlaminar fracture of carbon-thermoplastic polyimide composites
Mode I interlaminar fracture of a novel amorphous thermoplastic polyimide reinforced with unidirectional carbon fibre has been studied experimentally using double cantilever beam specimens and scanning electro...
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Article
The In-Based Metal Ohmic Contacts to n-GaAs
Electrical, structural and reaction characteristics of In-based ohmic contacts to n-GaAs was studied. Attempts were made to form a low band gap interfacial phase of InGaAs to reduce the barrier height at the m...
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Article
The Stability of TiH2 Used as Diffusion Barrier on SiO2 Substrates
TiH2 has been considered as a diffusion barrier and adhesion promoter between oxide and Cu. This phase is formed by reaction of Ti with hydrogen during rapid thermal annealings. In this investigation the stabilit...
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Article
The Surface Damage in SiO2 Caused by Chemical Mechanical Polishing on Ic-60 Pads
Chemical Mechanical polishing (CMP) is a useful technique for achieving global planarization in the ICs. The CMP of oxide has been used and studied for decades. Only recently the technique has been employed fo...
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Article
Surface and Interface Modification of Copper for Electronic Application
Before copper will be used in the manufacture of microelectronic circuits, a number of its surface and interface properties have to be addressed. These include corrosion resistance, adhesion to dielectrics, an...
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Article
Growth Kinetics and Materials Properties of Cu5Si
Thin copper films have been passivated by exposure to a dilute silane mixture (2% SiH4/Ar) at temperatures in the range of 225 - 375 °C. Previous XRD characterization indicates the surface layer to be Cu5Si[l]. S...
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Article
Irradiation Mixing of Al into U3Si
Thermal and irradiation induced intermixing of uranium suicide reactor fuels with the aluminum cladding is an important consideration in understanding their fission gas and fuel swelling behavior. We have used...
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Article
Effects of Light on the Resonant Tunneling in Silicon Quantum Dot Diode
The resonant tunneling via nanoscale silicon particles embedded in an a-SiO2 matrix in a diode structure has revealed a range of intriguing observations such as extremely sharp peaks and steps and periodic oscill...
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Article
Ageing behaviour of t′-phase in a hot-pressed ZrO2(4 mol% Y2O3) ceramic
The ageing behaviour of unequilibrium tetragonal (t′) phase and its resultant effect on the mechanical properties of hot-pressed ZrO2(4 mol% Y2O3) ceramic have been investigated by means of transmission electron ...
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Article
Electrochemical Characterization of Orthorhombic NaXMnO2 for Alkali Metal Polymer Batteries