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Effects of Light on the Resonant Tunneling in Silicon Quantum Dot Diode

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Abstract

The resonant tunneling via nanoscale silicon particles embedded in an a-SiO2 matrix in a diode structure has revealed a range of intriguing observations such as extremely sharp peaks and steps and periodic oscillations in (conductance-voltage) G-V measurements. Recently we have discovered a drastic sharpening of the conductance peak with light. Phase measurements show that the effects of light may be understood by invoking the filling of charged traps.

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Authors and Affiliations

  1. Department of Electrical Engineering, UNC Charlotte, Charlotte, NC, 28223, USA

    Chen Ding & Raphael Tsu

Authors
  1. Chen Ding
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  2. Raphael Tsu
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Ding, C., Tsu, R. Effects of Light on the Resonant Tunneling in Silicon Quantum Dot Diode. MRS Online Proceedings Library 378, 757–760 (1995). https://doi.org/10.1557/PROC-378-757

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  • DOI: https://doi.org/10.1557/PROC-378-757

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