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Comparison of Beam Scanning Systems

  • Conference paper
Ion Implantation: Equipment and Techniques

Part of the book series: Springer Series in Electrophysics ((SSEP,volume 11))

Abstract

Present day ion implanters provide uniform distribution of energetic ions into target materials, utilizing one or two of the basic beam scanning techniques; electrostatic, magnetic, and mechanical. Each beam scanning technique has physical limits and characteristics which affect its successful use in an ion implanter for semiconductor processing. This paper reviews the features and limits of each beam scanning technique. X-Y beam scanning systems using magnetic and electrostatic deflection are described. The ability for electrostatic X-Y scanning of μ perv.*, is reviewed and results reported.

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Author information

Authors and Affiliations

  1. Varian/Extrion Division, Box 1226, Gloucester, MA, 01930, USA

    N. Turner

Authors
  1. N. Turner
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Editor information

Editors and Affiliations

  1. Fraunhofer-Institut für Festkörpertechnologie, Paul-Gerhardt-Allee 42, D-8000, München 60, Germany

    Heiner Ryssel

  2. Siemens AG, Balanstraße 73, D-8000, München 80, Germany

    Hans Glawischnig

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© 1983 Springer-Verlag Berlin Heidelberg

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Turner, N. (1983). Comparison of Beam Scanning Systems. In: Ryssel, H., Glawischnig, H. (eds) Ion Implantation: Equipment and Techniques. Springer Series in Electrophysics, vol 11. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-69156-0_15

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  • DOI: https://doi.org/10.1007/978-3-642-69156-0_15

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-69158-4

  • Online ISBN: 978-3-642-69156-0

  • eBook Packages: Springer Book Archive

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