Log in

35 Years of challenge and innovation in ion implant

  • Review
  • Published:
MRS Advances Aims and scope Submit manuscript

Abstract

Over the last 35 years the implant industry has faced several technical challenges. Usually, but not always, these are brought on by semiconductor scaling causing a change of dimensions, materials, or topologies. So far, each time that has caused a problem for the existing technology, there has been an innovation that has saved the day. Some innovations, like the plasma flood gun now seem relatively minor. Others, like single wafer implantation were more significant. We will review several of these critical innovations.

Graphical Abstract

This is a preview of subscription content, log in via an institution to check access.

Access this article

Subscribe and save

Springer+ Basic
EUR 32.99 /Month
  • Get 10 units per month
  • Download Article/Chapter or Ebook
  • 1 Unit = 1 Article or 1 Chapter
  • Cancel anytime
Subscribe now

Buy Now

Price includes VAT (Germany)

Instant access to the full article PDF.

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6

Similar content being viewed by others

Data availability

The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.

References

  1. C. McKenna, B. Pedersen, J. Lee, R. Outcault, S. Kikuchi, Nucl. Instr. Meth. B37/38, 605–608 (1989)

    Google Scholar 

  2. H. Ito, J. England, F. Plumb, I. Fotheringham, US Patent # 5,399,871 1995

  3. H. Ito, et al., Proc 10th Int. Conf. Ion Implant. Tech., Catania, Italy, (30–33) (1994)

  4. H. Fujisawa et al., 14th Int. Conf. Ion Implant. Tech., Taos, NM, (377–382) (2002)

  5. B. Vanderberg, T. Nakatsugawa, W. Divergilio, 19th Int. Conf. Ion Implant. Tech., Valladolid, Spain, (356–59) (2012)

  6. V.K. Rawlin, E.V. Pawlik, A mercury plasma bridge neutralizer. J. Spacecr. Rockets 5(7), 814–820 (1968)

    Article  Google Scholar 

  7. A. Renau, in Ion Implantation Applications, Science & Technology, Ed. by J. Ziegler (Ion Implantation Technology Co., Chester, Maryland, USA, 2018), ISBN - 0-9654208-4-4

  8. R. Rathmell, T. Hsieh, F. Trueira, Proc 13th Int. Conf. Ion Implant. Tech., Alpach Austria, (524–526) (2000)

  9. R. Kirchner, E. Roeckl, Nucl. Instrum. Meth. 127, 307–309 (1975)

    Article  Google Scholar 

  10. D. Berrian, R. Kaim, J. Vanderpot, J. Westendorp, Proc 7th Int. Conf. Ion Implant. Tech., Kyoto, Japan, (500–3) (1988)

  11. L. Pipes et al., Proc 15th Int. Conf. Ion Implant. Tech., Taipei, Taiwain, (330–335) (2004)

  12. N. White, M. Sieradzki, A. Renau, Proc 11th Int. Conf. Ion Implant. Tech., Austin, TX, (396–9) (1996)

  13. A. Murrell, et al., Proc 16th Int. Conf. Ion Implant. Tech., Marseilles, France, (618–621) (2006)

  14. Mark LaPedus, EETimes, Applied materials to exit implanter business. (2007)

  15. A. Renau, Proc 16th Int. Conf. Ion Implant. Tech., Marseilles, France, (345–348) (2006)

  16. A. Renau, ECS Trans. 35(2), 173 (2011)

  17. C. Wang et al., 17th International Workshop on Junction Technology, Uji, Japan, pp. 58–61 (2017)

  18. F. Torregrosa, et al., 22nd Int. Conf. Ion Implant Techn., Wurzburg, Germany, (33–37) (2018)

  19. A. Renau, J.T. Scheuer, Proc of 14th Int. Conf. Ion Implant. Tech, Taos, NM, (151–156) (2002)

  20. P. Kellerman, et al., US Patent #7,888,653 (2011)

  21. B. Vanderberg, P. Heres, E. Eisner, B. Libby, J. Valinski, W. Huff , Introducing Purion H. https://www.axcelis.com/wp-content/uploads/2019/03/IntroducingThePurionH_Vanderberg_FINAL.pdf

  22. K. Suguro, et al., Mat. Res. Soc. Symp. Proc. Vol. 669, (2001)

  23. A. Renau, 10th Int. Workshop on Junction Technology, Shanghai, China (2010)

  24. C.L. Yang, et al., Proc. Tech. Prog. 2012 VLSI Tech., Sys. and App., Hsinchu, Taiwan, (2012)

  25. Y.R. Yang, et al., Proc. IEEE Symp. VLSI Tech., Honolulu, HI, (2016)

  26. C.L. Yang et al., IEEE Electron Device Lett. 33(10), 1444–1446 (2012)

    Article  CAS  Google Scholar 

  27. L. Pipes, L. McGill, A. Jahagirdar, Proc 20th Int. Conf. Ion Implant. Tech., Portland, OR, (2014)

  28. Y. Sasaki, et al., 2015 Symp VLSI Tech., T30–31, Kyoto, Japan, (2015)

  29. P. Hashemi, et al., Proc. IEEE Symp. VLSI Tech., 2016 VLSI Tech., Honolulu, HI, (2016)

  30. B. Wood, et al., Abstract #2237, 224th ECS Meeting, 2013 The Electrochemical Society

Download references

Acknowledgments

I would like to thank the kind folk who helped me with the material for this presentation. They were Joe Olson, Michael Current, Ben Colombeau, Chris Campbell, Tim Miller, Chris Hatem, Aseem Srivastava, Craig Chaney, Jay Scheuer, Steve Krause, Jonathan England, Reuel Liebert and Frank Sinclair. This would not have been possible without their generous support.

Funding

No funds, Grants, or other support was received.

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Anthony Renau.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Renau, A. 35 Years of challenge and innovation in ion implant. MRS Advances 7, 1234–1240 (2022). https://doi.org/10.1557/s43580-022-00366-4

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/s43580-022-00366-4

Navigation