Abstract
Over the last 35 years the implant industry has faced several technical challenges. Usually, but not always, these are brought on by semiconductor scaling causing a change of dimensions, materials, or topologies. So far, each time that has caused a problem for the existing technology, there has been an innovation that has saved the day. Some innovations, like the plasma flood gun now seem relatively minor. Others, like single wafer implantation were more significant. We will review several of these critical innovations.
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The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.
References
C. McKenna, B. Pedersen, J. Lee, R. Outcault, S. Kikuchi, Nucl. Instr. Meth. B37/38, 605–608 (1989)
H. Ito, J. England, F. Plumb, I. Fotheringham, US Patent # 5,399,871 1995
H. Ito, et al., Proc 10th Int. Conf. Ion Implant. Tech., Catania, Italy, (30–33) (1994)
H. Fujisawa et al., 14th Int. Conf. Ion Implant. Tech., Taos, NM, (377–382) (2002)
B. Vanderberg, T. Nakatsugawa, W. Divergilio, 19th Int. Conf. Ion Implant. Tech., Valladolid, Spain, (356–59) (2012)
V.K. Rawlin, E.V. Pawlik, A mercury plasma bridge neutralizer. J. Spacecr. Rockets 5(7), 814–820 (1968)
A. Renau, in Ion Implantation Applications, Science & Technology, Ed. by J. Ziegler (Ion Implantation Technology Co., Chester, Maryland, USA, 2018), ISBN - 0-9654208-4-4
R. Rathmell, T. Hsieh, F. Trueira, Proc 13th Int. Conf. Ion Implant. Tech., Alpach Austria, (524–526) (2000)
R. Kirchner, E. Roeckl, Nucl. Instrum. Meth. 127, 307–309 (1975)
D. Berrian, R. Kaim, J. Vanderpot, J. Westendorp, Proc 7th Int. Conf. Ion Implant. Tech., Kyoto, Japan, (500–3) (1988)
L. Pipes et al., Proc 15th Int. Conf. Ion Implant. Tech., Taipei, Taiwain, (330–335) (2004)
N. White, M. Sieradzki, A. Renau, Proc 11th Int. Conf. Ion Implant. Tech., Austin, TX, (396–9) (1996)
A. Murrell, et al., Proc 16th Int. Conf. Ion Implant. Tech., Marseilles, France, (618–621) (2006)
Mark LaPedus, EETimes, Applied materials to exit implanter business. (2007)
A. Renau, Proc 16th Int. Conf. Ion Implant. Tech., Marseilles, France, (345–348) (2006)
A. Renau, ECS Trans. 35(2), 173 (2011)
C. Wang et al., 17th International Workshop on Junction Technology, Uji, Japan, pp. 58–61 (2017)
F. Torregrosa, et al., 22nd Int. Conf. Ion Implant Techn., Wurzburg, Germany, (33–37) (2018)
A. Renau, J.T. Scheuer, Proc of 14th Int. Conf. Ion Implant. Tech, Taos, NM, (151–156) (2002)
P. Kellerman, et al., US Patent #7,888,653 (2011)
B. Vanderberg, P. Heres, E. Eisner, B. Libby, J. Valinski, W. Huff , Introducing Purion H. https://www.axcelis.com/wp-content/uploads/2019/03/IntroducingThePurionH_Vanderberg_FINAL.pdf
K. Suguro, et al., Mat. Res. Soc. Symp. Proc. Vol. 669, (2001)
A. Renau, 10th Int. Workshop on Junction Technology, Shanghai, China (2010)
C.L. Yang, et al., Proc. Tech. Prog. 2012 VLSI Tech., Sys. and App., Hsinchu, Taiwan, (2012)
Y.R. Yang, et al., Proc. IEEE Symp. VLSI Tech., Honolulu, HI, (2016)
C.L. Yang et al., IEEE Electron Device Lett. 33(10), 1444–1446 (2012)
L. Pipes, L. McGill, A. Jahagirdar, Proc 20th Int. Conf. Ion Implant. Tech., Portland, OR, (2014)
Y. Sasaki, et al., 2015 Symp VLSI Tech., T30–31, Kyoto, Japan, (2015)
P. Hashemi, et al., Proc. IEEE Symp. VLSI Tech., 2016 VLSI Tech., Honolulu, HI, (2016)
B. Wood, et al., Abstract #2237, 224th ECS Meeting, 2013 The Electrochemical Society
Acknowledgments
I would like to thank the kind folk who helped me with the material for this presentation. They were Joe Olson, Michael Current, Ben Colombeau, Chris Campbell, Tim Miller, Chris Hatem, Aseem Srivastava, Craig Chaney, Jay Scheuer, Steve Krause, Jonathan England, Reuel Liebert and Frank Sinclair. This would not have been possible without their generous support.
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Renau, A. 35 Years of challenge and innovation in ion implant. MRS Advances 7, 1234–1240 (2022). https://doi.org/10.1557/s43580-022-00366-4
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DOI: https://doi.org/10.1557/s43580-022-00366-4