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Wet etch, dry etch, and MacEtch of β-Ga2O3: A review of characteristics and mechanism

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  • Focus Issue: Ultra-wide Bandgap Materials, Devices, and Systems
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Abstract

β-Ga2O3, a promising ultra-wide bandgap material for future high-power electronics and deep-ultraviolet optoelectronics applications, has drawn tremendous attention in recent years due to its wide bandgap of ~ 4.8 eV, high breakdown electric field, and availability of substrates. However, the reported etch behavior of β-Ga2O3 and the quality of etched surfaces, as well as the associated interface characteristics, could limit the performance of β-Ga2O3 devices. In this article, the etchings of β-Ga2O3, including regular wet etching, photoelectrochemical etching (PEC), reactive ion etching (RIE) and metal-assisted chemical etching (MacEtch), are reviewed. A comparison of the etch rate, orientation dependence, aspect ratio, etching mechanism, and surface quality for each of these etching methods is presented and the step-by-step reactions in PEC and MacEtch are proposed to elucidate the etch mechanism. The challenges for these etching techniques for β-Ga2O3 are discussed.

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Figure 1
Figure 2

© 2018 AIP. Reprinted with permission. (d) SEM image of unetched β-Ga2O3 sample with Pt mesh pattern on top. (e) Top-view SEM image of β-Ga2O3 surface after 6 h MacEtch with Pt mesh catalyst pattern [32]. © 2019 ACS. Reprinted with permission.

Figure 3
Figure 4

© 2019 ACS. Reprinted with permission.

Figure 5

© 2019 ACS. Reprinted with permission.

Figure 6

© 2018 ELSEVIER. Reprinted with permission.

Figure 7

© 2018 ELSEVIER. Reprinted with permission.

Figure 8
Figure 9

© 2018, AIP Publishing. Reprinted with permission.

Figure 10

© 2019, Elsevier B.V. (b) Reverse I–V characteristics of dry-etched β-Ga2O3 diodes and annealed at 450 °C before/after the deposition of metal [56]. © 2017, American Vacuum Society.

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Acknowledgments

This work was supported in part by the National Science Foundation under Grant No. 18-09946.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Holonyak Micro and Nanotechnology Laboratory, University of Illinois, Urbana, IL, 61801, USA

    Hsien-Chih Huang, Clarence Chan & **uling Li

  2. Department of Electrical and Computer Engineering and Microelectronics Research Center, University of Texas, Austin, TX, 78758, USA

    Zhongjie Ren & **uling Li

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Huang, HC., Ren, Z., Chan, C. et al. Wet etch, dry etch, and MacEtch of β-Ga2O3: A review of characteristics and mechanism. Journal of Materials Research 36, 4756–4770 (2021). https://doi.org/10.1557/s43578-021-00413-0

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