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SiC and GaN Power Devices

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More-than-Moore Devices and Integration for Semiconductors

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Abstract

In an increasingly electrified, technology-driven world, power electronics is central to the entire clean energy manufacturing economy. Power switching semiconductor devices are key enablers in a wide range of power applications, including novel lighting technologies, automotive and rail traction, on board chargers, consumer electronics, aerospace, photovoltaic, flexible alternative current transmission systems, high-voltage DC systems, microgrids, energy storage, motor drives, UPS, and data centers. Silicon power devices have dominated power electronics due to their low-cost volume production, excellent starting material quality, ease of processing, and proven reliability and ruggedness. Although Si power devices continue to make progress, they are approaching their operational limits primarily due to their poor high-temperature performance and their relatively low bandgap and critical electric field, which result in high conduction and switching losses. Wide bandgap (WBG) SiC and GaN power semiconductor devices have recently emerged as highly efficient alternatives to their venerable MOSFET and IGBT Si counterparts. With smaller form factor, reduced cooling requirements, and established reliability, WBG devices are cost-effective silicon replacements at the system level while allowing for novel circuit architectures and simplification. In particular, as environmental awareness and a worldwide push for a zero emissions economy gain prominence, the energy efficiency offered by WBG solutions is a strong driver in their wide market acceptance and mass commercialization.

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Authors and Affiliations

  1. FORTH, IESL, Crete, Greece

    Konstantinos Zekentes

  2. Grenoble INP, IMEP-LaHC, Grenoble, France

    Konstantinos Zekentes

  3. PowerAmerica/NCSU-ECE, Raleigh, NC, USA

    Victor Veliadis

  4. Wolfspeed, Durham, NC, USA

    Sei-Hyung Ryu

  5. Newcastle University, Newcastle upon Tyne, UK

    Konstantin Vasilevskiy

  6. NCSU-ECE, Raleigh, NC, USA

    Spyridon Pavlidis

  7. Alpha & Omega Semiconductor, Sunnyvale, CA, USA

    Arash Salemi

  8. CPES, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA

    Yuhao Zhang

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  1. Australian Research Council Centre of Excellence in Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, Australia

    Francesca Iacopi

  2. Univ. Grenoble Alpes, CNRS, Grenoble INP, IMEP-LAHC, Grenoble, France

    Francis Balestra

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Zekentes, K. et al. (2023). SiC and GaN Power Devices. In: Iacopi, F., Balestra, F. (eds) More-than-Moore Devices and Integration for Semiconductors. Springer, Cham. https://doi.org/10.1007/978-3-031-21610-7_2

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