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Effects of thermal oxidation duration on the structural and electrical properties of Nd2O3/Si system

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Abstract

A study on the growth, structure and electrical properties of Nd2O3 was carried out experimentally on RF sputtered thin film on Si followed by thermal oxidation at 700 °C at different oxidation durations (5, 10, 15 and 20 min). The structural and chemical properties were studied by X-ray diffraction analysis, Fourier transform infrared analysis, Raman analysis and high resolution transmission electron microscopy analysis. The formation of cubic-Nd2O3, orthorhombic-Nd2Si2O7, monoclinic-SiO2, tetragonal-SiO2 and hexagonal-SiO2 was detected. A single interfacial layer was detected for the sample oxidized at 15 min and double interfacial layers were detected for the samples oxidized at 5, 10 and 20 min. The sample oxidized at 15 min possessed the best electrical properties which were attributed by the highest Nd2O3 intensity, largest SiO2 crystallite structure, thinnest interfacial and oxide layer, highest barrier height, lowest effective oxide charges, slow trap density and average interface trap density.

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Acknowledgements

This work was supported by University of Malaya through Postgraduate Research Grant (PPP) [PG028-2015A] and Ministry of Higher Education, Malaysia through Fundamental of Research Grant Scheme (FRGS) [FRGS/1/2016/STG07/UM/02/6].

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Authors and Affiliations

  1. Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603, Kuala Lumpur, Malaysia

    Karuppiah Hetherin, S. Ramesh & Yew Hoong Wong

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  1. Karuppiah Hetherin
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Correspondence to Yew Hoong Wong.

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Hetherin, K., Ramesh, S. & Wong, Y.H. Effects of thermal oxidation duration on the structural and electrical properties of Nd2O3/Si system. Appl. Phys. A 123, 510 (2017). https://doi.org/10.1007/s00339-017-1122-z

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