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Resonant electron tunneling and related charging phenomena in metal–oxide–p +-Si nanostructures

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Abstract

The j–V characteristics of the Al/thermal or electrochemical SiO2(2–4 nm)/heavily doped p +-Si nanostructures operating as a resonant-tunneling diode were measured and theoretically analyzed. The characteristics have specific features in the form of current steps and peaks, which are caused by electron transport between the silicon valence band and metal through discrete levels of the quantum well formed by the p +-Si conduction band and SiO2/p +-Si interface. Resonant tunneling through the surface state levels and the appearance of a charge near this interface under certain conditions are discussed.

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Authors and Affiliations

  1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    M. I. Vexler, Yu. Yu. Illarionov & I. V. Grekhov

  2. Physical Faculty, St. Petersburg State University, St. Petersburg, 198504, Russia

    G. G. Kareva

  3. Institute for Microelectronics, TU Wien, Vienna, A-1040, Austria

    Yu. Yu. Illarionov

Authors
  1. M. I. Vexler
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  2. G. G. Kareva
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  3. Yu. Yu. Illarionov
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  4. I. V. Grekhov
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Corresponding author

Correspondence to M. I. Vexler.

Additional information

Original Russian Text © M.I. Vexler, G.G. Kareva, Yu.Yu. Illarionov, I.V. Grekhov, 2016, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2016, Vol. 42, No. 21, pp. 62–69.

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Vexler, M.I., Kareva, G.G., Illarionov, Y.Y. et al. Resonant electron tunneling and related charging phenomena in metal–oxide–p +-Si nanostructures. Tech. Phys. Lett. 42, 1090–1093 (2016). https://doi.org/10.1134/S1063785016110109

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  • DOI: https://doi.org/10.1134/S1063785016110109

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