Based on the consideration of physical processes in a heterostructure with quantum wells (QW), its equivalent circuit is constructed including a barrier capacitance and a differential resistance of the p-n junction, capacitance and resistance of charge relaxation in QW, and resistance of free charge carrier delivery to QW. Analytical expressions for the equivalent capacity and equivalent resistance of the heterostructure for a serial substitution circuit are derived, and behavior of the equivalent parameters attendant to changes of the test signal frequency is analyzed. Results of experimental investigation of the capacitive and resistive properties of the heterostructures with QW based on the InGaN/GaN barriers confirm the calculated dependences of their equivalent parameters and demonstrate their dependence on the special features of the kinetic properties of the heterostructures.
Similar content being viewed by others
References
R. L.-Y. Sah, Proc. IEEE, 55, No. 5, 654–671 (1967).
R. S. Nakhmanson, Sol.-Stat. Electron., 19, No. 9, 745–758 (1976).
A. V. Voitsekhovskii and V. N. Davydov, Photoelectric MIS Structures Based on Narrow-Band Semiconductors [in Russian], Sovetskoe Radio, Tomsk (1990).
A. Van Der Ziel, Noise. Sources. Characterization, Measurement [Russian translation], Sovetskoe Radio, Moscow (1973).
K. Seken and M. Thompset, Devices with Charge Transfer [Russian translation], Mir, Moscow (1978).
V. N. Davydov, Russ. Phys. J., 57, No. 8, 1082–1085 (2014).
V. I. Zubkov, Fiz. Tekh. Poluprovodn., 41, No. 3, 331–337 (2007).
S. S. Khludkov, I. A. Prudaev, and O. P. Tolbanov, Russ. Phys. J., 56, No. 9, 997–1006 (2014).
Author information
Authors and Affiliations
Corresponding author
Additional information
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 102–109, July, 2015.
Rights and permissions
About this article
Cite this article
Davydov, V.N., Novikov, D.A. Equivalent Circuit of a Heterostructure with Multiple Quantum Wells. Russ Phys J 58, 987–995 (2015). https://doi.org/10.1007/s11182-015-0599-1
Received:
Revised:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11182-015-0599-1