Abstract
Substituent effect on the structure and electronic properties of the Si2(para-C6H4X)2 molecules (X = NH2, OH, Me, H, F, Cl, CN, NO2) were studied at wB97XD/6-311G(d,p) level of theory. The substituent effect on the structural parameters, reactivity parameters (hardness, chemical potential and electrophilicity) and 29Si NMR chemical shift was explored. Stability of the Si(para-C6H4X) fragments were investigated in the doublet and quartet states for illustration of the Si≡Si bond character. Substituent influence on the stability of these different spin multiplicities of Si(para-C6H4X) fragments was investigated. The Si–Si bonding situation in the studied molecules was examined via the Shubin Liu’s energy decomposition analysis (EDA-SBL), adaptive natural density partitioning (AdNDP), and Quantum theory of atoms in molecules (QTAIM) schemes.
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1134%2FS0036024420130208/MediaObjects/11504_2020_4124_Fig1_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1134%2FS0036024420130208/MediaObjects/11504_2020_4124_Fig2_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1134%2FS0036024420130208/MediaObjects/11504_2020_4124_Fig3_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1134%2FS0036024420130208/MediaObjects/11504_2020_4124_Fig4_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1134%2FS0036024420130208/MediaObjects/11504_2020_4124_Fig5_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1134%2FS0036024420130208/MediaObjects/11504_2020_4124_Fig6_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1134%2FS0036024420130208/MediaObjects/11504_2020_4124_Fig7_HTML.gif)
Similar content being viewed by others
REFERENCES
M. Weidenbruch, The Chemistry of Organic Silicon Compounds (Wiley, Chichester, 2001).
P. P. Power, Chem. Rev. 99, 3463 (1999).
G. H. Robinson, Acc. Chem. Res. 32, 773 (1999).
P. Jutzi, Angew. Chem., Int. Ed. 39, 3797 (2000).
M. Weidenbruch, J. Organomet. Chem. 646, 39 (2002).
A. Sekiguchi, M. Ichinohe, and R. Kinjo, Bull. Chem. Soc. Jpn. 79, 825 (2006).
A. Sekiguchi, S. S. Zigler, R. West, and J. Michl, J. Am. Chem. Soc. 108, 4241 (1986).
A. Sekiguchi, S. S. Zigler, K. J. Haller, and R. West, Recl. Trav. Chim. Pays-Bas. 107, 197 (1988).
N. Wiberg, S. K. Vasisht, G. Fischer, and P. Mayer, Z. Anorg. Allgem. Chem. 630, 1823 (2004).
A. Sekiguchi, R. Kinjo, and M. Ichinohe, Science (Washington, DC, U. S.) 305, 1755 (2004).
M. M. Law, J. T. Fraser-Smith, and C. U. Perotto, Phys. Chem. Chem. Phys. 14, 6922 (2012).
M. Lein, A. Krapp, and G. Frenking, J. Am. Chem. Soc. 127, 6290 (2005).
I. Papai, Theor. Chem. Acc. 104, 131 (2000).
X. Li, B. Kiran, and L.-S. Wang, J. Phys. Chem. A 109, 4366 (2005).
M. T. Nguyen, D. Sengupta, and L. G. Vanquickenborne, Chem. Phys. Lett. 244, 83 (1995).
T. C. Smith, C. J. Evans, and D. J. Clouthier, J. Chem. Phys. 118, 1642 (2003).
R. I. Kaiser and Y. Osamura, Astrophys. J. 630, 1217 (2005).
S. Ishida, R. Sugawara, Y. Misawa, and T. Iwamoto, Angew. Chem., Int. Ed 52, 12869 (2013).
R. Ghiasi, J. Struct. Chem. 51, 204 (2010).
A. Stockmann, J. Kurzawa, N. Fritz, N. Acar, S. Schneider, J. Daub, R. Engl, and T. Clark, J. Phys. Chem. A 106, 7958 (2002).
M. Ottonelli, M. Piccardo, D. Duce, S. Thea, and G. Dellepiane, J. Phys. Chem. A 116, 611 (2012).
Y.-H. Cheng, Y. Fang, X. Zhao, L. Liu, and Q.‑X. Guo, Bull. Chem. Soc. Jpn. 75, 1715 (2002).
F. Pichierri, Theor. Chem. Acc. 136, 114 (2017).
G. S. Remya and C. H. Suresh, Phys. Chem. Chem. Phys. 18, 20615 (2016).
H. Szatylowicz, A. Jezuita, T. Siodła, K. S. Varaksin, M. A. Domanski, K. Ejsmont, and T. M. Krygowski, ACS Omega 2, 7163 (2017).
R. Ghiasi and A. Zamani, J. Chin. Chem. Soc. 64, 1340 (2017).
R. Ghiasi, H. Pasdar, and S. Fereidoni, Russ. J. Inorg. Chem. 61, 327 (2016).
R. Ghiasi and A. Heydarbeighi, Russ. J. Inorg. Chem. 61, 985 (2016).
R. Ghiasi, H. Pasdar, and F. Irajizadeh, J. Chil. Chem. Soc. 60, 2740 (2015).
R. Ghiasi, S. Abdolmohammadi, and S. Moslemizadeh, J. Chin. Chem. Soc. 62, 898 (2015).
A. Peikari, R. Ghiasi, and H. Pasdar, Russ. J. Phys. Chem. A 89, 250 (2015).
M. Z. Fashami and R. Ghiasi, J. Struct. Chem. 56, 1474 (2015).
H. Pasdar and R. Ghiasi, Main Group Chem. 8, 143 (2009).
A. N. Egorochkin, O. V. Kuznetsova, N. M. Khamaletdinova, and L. G. Domratcheva-Lvova, Inorg. Chim. Acta 471, 148 (2018).
H. Anane, S. E. Houssame, A. E. Guerraze, A. Guermoune, A. Boutalib, A. Jarid, I. Nebot-Gil, and F. Tomás, Cent. Eur. J. Chem. 6, 400 (2008).
D. M. Denning and D. E. Falvey, J. Org. Chem. 82, 1552 (2017).
A. Zamani, R. Ghiasi, M. S. Sadjadi, and M. Yousefi, Russ. J. Phys. Chem. A 93, 880 (2019).
M. Rahimi, H. Chermette, S. Jamehbozorgi, R. Ghiasi, and M. P. Kalhor, Russ. J. Phys. Chem. A 93, 1747 (2019).
S. Fereidoni, R. Ghiasi, H. Pasdar, and B. Mohtat, J. Struct. Chem. 60, 1743 (2019).
A. Zamani, R. Ghiasi, M. S. Sadjadi, and M. Yousefi, Russ. J. Inorg. Chem. 63, 906 (2018).
L. P. Hammett, J. Am. Chem. Soc. 59, 96 (1937).
M. J. Frisch, G. W. Trucks, H. B. Schlegel, G. E. Scuseria, M. A. Robb, J. R. Cheeseman, G. Scalman, V. Barone, B. Mennucci, G. A. Petersson, H. Nakatsuji, M. Caricato, X. Li, H. P. Hratchian, A. F. Izmaylov, et al., Gaussian 09 (Gaussian, Inc., Wallingford, CT, 2009).
R. Krishnan, J. S. Binkley, R. Seeger, and J. A. Pople, J. Chem. Phys. 72, 650 (1980).
A. D. McLean and G. S. Chandler, J. Chem. Phys. 72, 5639 (1980).
L. A. Curtiss, M. P. McGrath, J.-P. Blandeau, N. E. Davis, R. C. Binning, and J. L. Radom, J. Chem. Phys. 103, 6104 (1995).
J. D. Chai and M. Head-Gordon, Phys. Chem. Chem. Phys. 10, 6615 (2008).
M. Head-Gordon, J. A. Pople, and M. J. Frisch, Chem. Phys. Lett. 153, 503 (1988).
T. Lu and F. Chen, J. Comput. Chem. 33, 580 (2012).
T. Lu and F. Chen, J. Mol. Graph. Model. 38, 314 (2012).
S. Liua, J. Chem. Phys. 126, 244103 (2007).
K. Wolinski, J. F. Hinton, and P. Pulay, J. Am. Chem. Soc 112, 8251 (1990).
D. Y. Zubarev and A. I. Boldyrev, Phys. Chem. Chem. Phys. 10, 5207 (2008).
I. Cukrowski, J. H. d. Lange, and M. Mitoraj, J. Phys. Chem. A 118, 623 (2014).
R. F. W. Bader, T. S. Slee, D. Cremer, and E. Kraka, J. Am. Chem. Soc. 105, 5069 (1983).
N. J. M. Amezaga, S. C. Pamies, N. M. Peruchena, and G. L. Sosa, J. Phys. Chem. A 114, 552 (2010).
B. Niepötter, R. Herbst-Irmer, D. Kratzert, P. P. Samuel, K. C. Mondal, H. W. R. P. Jerabek, G. Frenking, and D. Stalke, Angew. Chem., Int. Ed. 53, 2766 (2014).
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
The authors declare that they have no conflict of interest.
Rights and permissions
About this article
Cite this article
Amin Rezaei, Ghiasi, R. & Marjani, A. Exploring the Substituent Еffect on the Structure and Еlectronic Рroperties of Si2(para-C6H4X)2 Мolecules. Russ. J. Phys. Chem. 94, 2760–2769 (2020). https://doi.org/10.1134/S0036024420130208
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S0036024420130208