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Metal-to-insulator transition in platinum group compounds

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Abstract

The metal-to-insulator transition (MIT) as usually achieved in 3d-orbital transitional metal (TM) compounds opens up a new paradigm in correlated electronics via triggering abrupt variations in their transportation properties. Compared to such 3d-orbital TM compounds, the MIT within the platinum group (Pg) element compounds based on the 4d- and 5d-orbital configurations is more complicated, owing to their elevation in the spin–orbit coupling and meanwhile weakened intra-atomic Coulomb repulsions. This brings in a new freedom to regulate the balance in their metallic or semiconductive orbital configurations, while their MIT properties can be potentially combined with their spintronic properties to enable new electronic applications. Herein, we review the electronic transport and MIT behaviors within the existing family of Pg-containing compounds, particularly those showing first-order MIT behaviors that can be useful in correlated electronics. It is also hoped that summarizing the presently reported Pg-containing MIT compounds will lead to the discovery of more new material families and/or new mechanisms associated with the Pg-containing compounds showing MIT properties.

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摘要

通常在3d轨道过渡金属（TM）化合物中实现的金属绝缘体相变（MIT）通过触发其电输运特性的突然变化，为**关联电子学开辟了新的范式。与3d轨道过渡金属化合物相比，基于4d和5d轨道构型的铂族（Pg）元素化合物的MIT更为复杂，因为它们的自旋-轨道耦合作用增**，同时原子内库仑排斥力减弱。这为调节其金属或半导体轨道构型中的**衡带来了新的自由度，而它们的MIT特性可以潜在地与其自旋电子学特性相结合，以实现新的电子应用。在本文中，我们回顾了现有含铂族元素化合物家族中的电传输和MIT行为，特别是那些在**相关电子学中有用的一阶MIT行为，同时希望总结目前报道过的含铂族元素的MIT化合物将引导发现更多与表现MIT性质的含Pg化合物相关的新材料家族和/或新机制。

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Fig. 1

Reproduced with permission from Ref. [21]. Copyright 2008, American Physical Society. c Factors affecting metal-to-insulator transition property in 3d-/4d-/5d-transition metal materials

Fig. 2

Copyright 1969, American Chemical Society

Fig. 3

Copyright 2000, the American Physical Society. b Plotting TMIT as a function of elementary substitution amount (x) for Ca-site and Ru-site within Ca2RuO4 [43, 56]. c Plotting resistive change across metal to insulator transition (ρInsul./ρMet.) as a function of x for Ca-site and Ru-site within Ca2RuO4; d plotting ρInsul./ρMet. as a function of TMIT for doped Ca2RuO4; e temperature dependence of material resistivity for Ae3Pg2O7 (n = 2) [59,60,61]. f Temperature dependence of material resistivity for AePgO3 (n = ∞) [22, 62,63,64, 67, 115]

Fig. 4

Copyright 1994, Elsevier. b Temperature dependence of material resistivity for RE2Ir2O7, RE2Os2O7, Cd2Ir2O7, Cd2Os2O7 and Hg2Os2O7 [24, 78, 80,81,82]. Reproduced with permission from Ref. [78]. Copyright 2011, the Physical Society of Japan

Fig. 5
Fig. 6
Fig. 7

Copyright 2012, the American Physical Society. b Temperature dependence of material resistivity normalized to 300 K for REPg4Pn12 (inset) crystal structure of REPg4Pn12 [108,109,110,111,112]

Fig. 8

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Acknowledgements

This work was financially supported by the National Key Research and Development Program of China (No. 2021YFA0718900), the National Natural Science Foundation of China (Nos. 62074014 and 52073090). J. Chen also acknowledges the support by **ao Mi scholar project.

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  1. School of New Energy, North China Electric Power University, Bei**g, 102206, China

    Yu-Xuan **a & Nuo-Fu Chen

  2. Key Laboratory of Advanced Materials and Devices for Post-Moore Chips (Ministry of Education), School of Materials Science and Engineering, University of Science and Technology Bei**g, Bei**g, 100083, China

    Ji-Kun Chen

  3. School of Mathematics and Physics, University of Science and Technology Bei**g, Bei**g, 100083, China

    Jian-Gang He

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**a, YX., He, JG., Chen, NF. et al. Metal-to-insulator transition in platinum group compounds. Rare Met. 43, 3460–3474 (2024). https://doi.org/10.1007/s12598-023-02598-1

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