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Electric field manipulation of magnetic skyrmions

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Abstract

Magnetic skyrmions are vortex-like swirling spin textures that are promising candidates for carrying information bits in future magnetic memories or logic circuits. To build skyrmionic devices, researchers must electrically manipulate magnetic skyrmions to enable easy integration into modern semiconductor technology. This operation generally uses a spin-polarized current, which unavoidably causes high energy dissipation and Joule heating. Thus, the electric-field strategy is a hopeful alternative for electrically manipulating the skyrmions due to the strategy’s negligible Joule heating and low energy cost. In this review, we systematically summarize the theoretical and experimental development of the electrical-field manipulation of magnetic skyrmions over the past decade. We review the following magnetic systems and physical mechanisms: (i) ultra-thin multilayer films with accumulation and release of interfacial charge, (ii) single-phase multiferroic material with magneto-electric coupling, (iii) ferromagnetic/ferroelectric (FM/FE) multiferroic heterostructure with magneto-elastic coupling. Finally, we consider future developmental trends in the electric-field manipulation of magnetic skyrmions and other topological magnetic domain structures.

Graphical abstract

摘要

磁斯格明子是一种类涡旋的自旋结构, 因其具有拓扑保护性、纳米级尺寸以及优异的磁电特性, 有望成为未来磁性存储器或逻辑器件中的信息载体。为使斯格明子器件易集成于现代半导体技术, 磁性斯格明子需要能通过电学手段操纵。目前主要采用自旋极化的电流操控斯格明子, 这种方法不可避免地会带来高能耗和高焦耳热问题。相比之下, 电场操控方式可以大大降低能耗引起的焦耳热可以忽略不计, 极具应用潜力。本文根据物理机理和材料体系, 从具有界面电荷积累和释放的超薄多层膜、具有磁电耦合的单相多铁材料、具有磁弹性耦合的铁磁/铁电(FM/FE)多铁异质结构三类材料体系系统地总结了**十年来电场操纵磁斯格明子的理论和实验方面的研究进展。最后, 我们对电场操控磁斯格明子和其他拓扑磁畴结构的发展趋势进行了展望。

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Fig. 1

Reproduced with permission from Ref. [76]. Copyright 2017, Springer Nature. b Schematic of skyrmion creation and annihilation in Pt/Co/oxide structure via application of electric field with opposite sign. c Evolution of magnetic skyrmion bubbles density in Pt/Co/oxide trilayer with different electric fields under a 0.15 mT perpendicular magnetic field. Reproduced with permission from Ref. [78]. Copyright 2017, American Chemical Society. d Device structure with current contacts and voltage contacts; e electric field non-volatile create and delete skyrmions measured by magnetic force microscope (MFM). Reproduced with permission from Ref. [79]. Copyright 2020, Springer Nature

Fig. 2

Reproduced with permission from Ref. [80]. Copyright 2018, Royal Society of Chemistry. c Schematic of voltage-controlled magnetic anisotropy gradient; d anisotropy gradient effect on skyrmion velocities. Reproduced with permission from Ref. [81]. Copyright 2018, American Physical Society

Fig. 3

Reproduced with permission from Ref. [82]. Copyright 2019, American Chemical Society. d, e Schematic illustration of sectional view and top view of Pt/CoNi/Pt/CoNi/Pt multilayer experiment sample, where gate voltage (VG) is applied between multilayer and ITO as indicated; f MOKE microscopy images of electric field-induced evolution of magnetic domains. Reproduced with permission from Ref. [83]. Copyright 2019, American Chemical Society

Fig. 4

Reproduced with permission from Ref. [84]. Copyright 2021, American Physical Society. d Illustration of experiment set of ionic gel gating modification; e schematic of voltage manipulation of skyrmion based on Ta/CoFeB/TaOx/MgO/Ta/IL/Pt structure; f magnetic domains evolution by gating voltage at flat state (Hz remaining at 2.5 × 10–4 T); g magnetic domains evolution by gating voltage at bent state (Hz remaining at 6.72 × 10–4 T). Reproduced with permission from Ref. [85]. Copyright 2020, John Wiley & Sons

Fig. 5

Reproduced with permission from Ref. [89]. Copyright 2012, American Physical Society

Fig. 6

Reproduced with permission from Ref. [90]. Copyright 2015, AIP Publishing. b Magnetic phase diagram of Cu2OSeO3 near transition temperature under electric fields of + 30 (blue), 0 (black), and –30 kV·cm−1 (red); c a.c. susceptibility as a function of electric field at 54 (blue), 55.5 (green), and 56.5 K (red), and 0.035 T fixed magnetic field. Reproduced with permission from Ref. [91]. Copyright 2016, Springer Nature. d Schematic illustration of sample configuration; e LTEM image before applied electric field (E); f LTEM image at E =  + 3.6 V·μm−2; f LTEM image at E =  − 3.6 V·μm−2 and (inset) corresponding direction of electric fields, magnetic field, and spontaneous electric polarization in LTEM images, where measurements were performed at 24.7 K with an magnetic field (B) of 0.0254 T (directions of E, B, and spontaneous P of skyrmion phase are shown on left with correspondence to LTEM images. Reproduced with permission from Ref. [92]. Copyright 2018, American Chemical Society

Fig. 7

Reproduced with permission from Ref. [105]. Copyright 2018, Elsevier. c Sketch ferromagnetic/piezoelectric heterostructure and strain the centerline (x-axis) of ferromagnetic nanostripe. Reproduced with permission from Ref. [103]. Copyright 2019, AIP Publishing. d Skyrmion speed as a function of either current density (blue) or strain gradient (red); e, f temporal evolution of skyrmion creation and deletion with different strains, where mz is volume average of normalized perpendicular magnetization, Q is topological charge number, and Δfintrin is change of intrinsic magnetic free energy density, Δfintrin(t) = fintrin(t)–fintrin(t = 0). Reproduced with permission from Ref. [102]. Copyright 2018, Springer Nature

Fig. 8

Reproduced with permission from Ref. [100]. Copyright 2020, Springer Nature. d–i Illustration isolated skyrmion morphology switch under different magnitude and orientation electric fields. Reproduced with permission from Ref. [101]. Copyright 2020, Springer Nature

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Acknowledgements

This work was financially supported by the National Key Research and Development Program of China (No. 2020YFA0309300), the Natural Science Foundation of Guangdong Province (No. 2016A030308019), the National Natural Science Foundation of China (Nos. 51901081 and 51871161), the Science and Technology Program of Guangzhou (Nos. 2019050001 and 202002030052).

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  1. Ya-Dong Wang, Zhi-Jian Wei and Hao-Ran Tu contributed equally to this work.

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  1. Guangdong Provincial Key Laboratory of Optical Information Material and Technology & Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China

    Ya-Dong Wang, Zhi-Jian Wei & Zhi-Peng Hou

  2. Dongguan University of Technology, Dongguan, 523808, China

    Hao-Ran Tu

  3. Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia

    Chen-Hui Zhang

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Wang, YD., Wei, ZJ., Tu, HR. et al. Electric field manipulation of magnetic skyrmions. Rare Met. 41, 4000–4014 (2022). https://doi.org/10.1007/s12598-022-02084-0

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