Abstract
The band alignments of high-k Er2O3 films grown on Ge substrates by molecular beam epitaxy are determined by X-ray photoelectron spectroscopy. The valence-band and the conduction-band offsets of Er2O3 to Ge are found to be \(3.16\pm0.02\) and \(2.13\pm0.02\ \mbox{eV}\), respectively. The energy gap of Er2O3 is \(5.96\pm0.02\ \mbox{eV}\) as determined by the optical spectrophotometry. From the band offset viewpoint, the above results indicate that Er2O3 could be a promising candidate for high-k gate dielectrics on Ge substrate.
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Acknowledgements
This work was supported by National Natural Science Foundation of China (Grant Nos. 11204202, 51272159, 11204205 and 61274056), the Natural Science Foundation of Zhejiang province (Grant No. Y6100596) and the Special Foundation of Taiyuan University of Technology (2012L080).
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Ji, T., Peng, L., Fang, Z. et al. Band offsets of \(\mathrm{Er}_{2}\mathrm{O}_{3}\) films grown on Ge substrates by X-ray photoelectron spectroscopy. Appl. Phys. A 115, 797–800 (2014). https://doi.org/10.1007/s00339-013-7870-5
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DOI: https://doi.org/10.1007/s00339-013-7870-5