Abstract
Thin HfTiOx high-k gate dielectric (Ti ~26.6%) has been sputter-deposited on strained Si0.81Ge0.19 heterolayers. The energy band discontinuities and interface properties were studied using X-ray photoelectron spectroscopy. The conduction band offset, and valance band offset between HfTiOx and Si0.81Ge0.19 were found to be 1.34 and 2.52 eV, respectively. Further, temperature-dependent (300–500 K) current density–voltage measurements (J–V) were utilized to explore the underlying leakage current conduction mechanism. The conductive dislocation and emission barrier heights at the hetero-interface have also been extracted from temperature-dependent J–V measurement. The barrier height of 1.22 to 2.02 eV for Schottky emission and 0.76 to 1.26 eV for Poole–Frenkel emission were estimated at the hetero-interface. To better understand the conduction mechanism between the hetero-interface and temperature-dependent J–V, a calibrated TCAD simulation was carried out.
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Acknowledgements
Sandipan Mallik and Shrabani Guhathakurata would like to sincerely thank the Department of Science and Technology–Science and Engineering Research Board (DST-SERB), New Delhi, India, for providing research funding [Project no: ECR/2018/002477] under the DST-ECR scheme.
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Maiti, P.P., Dash, A., Guhathakurata, S. et al. Experimental and simulation study of charge transport mechanism in HfTiOx high-k gate dielectric on SiGe heterolayers. Bull Mater Sci 45, 39 (2022). https://doi.org/10.1007/s12034-021-02622-z
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DOI: https://doi.org/10.1007/s12034-021-02622-z