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Removal of nanoparticles on silicon wafer using a self-channeled plasma filament

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Abstract

The effective removal of nanoparticles from a silicon wafer surface was demonstrated using the self-channeled plasma filament excited by a femtosecond (130 fs) Ti:sapphire laser (λ p=790 nm). The photoinduced self-channeled plasma filament in air reached a length of approximately 110–130 mm from the first focal spot with diameters ranging from 40 to 50 μm at input intensities of more than 1.0×1014 W/cm2. By the scan of wafer using the X–Y–Z stage during self-channeled plasma filament, the removal variation of nanoparticles on surface was observed in situ before and after the plasma filament occurred. The cleaning efficiency was strongly dependent on the gap distance between the plasma filament and the surface. The removal efficiency of nanoparticles reached 96 % with no damage to the surface when the gap was 150 μm.

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Acknowledgements

This work was partially supported by a grant-in-aid for the National Core Research Center Program from the Ministry of Science & Technology and the Korea Science & Engineering Foundation.

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Authors and Affiliations

  1. Nano Machining Laboratory, KIMM (Korea Institute of Machinery and Materials), 171 Jang-dong, Yuseong-Gu, Daejeon, 305-343, South Korea

    Jung-Kyu Park, Ji-Wook Yoon, Kyung-Hyun Whang & Sung-Hak Cho

  2. Department of Nano-Mechatronics, UST (University of Science and Technology), 176 Gajung-dong, Yuseong-Gu, Daejeon, 305-350, South Korea

    Jung-Kyu Park, Ji-Wook Yoon & Sung-Hak Cho

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  1. Jung-Kyu Park
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  2. Ji-Wook Yoon
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Correspondence to Sung-Hak Cho.

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Park, JK., Yoon, JW., Whang, KH. et al. Removal of nanoparticles on silicon wafer using a self-channeled plasma filament. Appl. Phys. A 108, 269–274 (2012). https://doi.org/10.1007/s00339-012-7024-1

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  • DOI: https://doi.org/10.1007/s00339-012-7024-1

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