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Study of Silicon Etching Modes in Combined Plasma Discharge for the Formation of Optoelectronic Structures

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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

We deal with issues related to the formation of ordered silicon nanostructures by processing in a combined fluoride plasma for the formation of monolithic-integrated A3B5 nanostructures. The dependences of the geometric parameters of the formed structures (wall inclination angle, height, and surface roughness) on the power of inductively coupled and capacitive plasma sources were obtained. It is shown that at a structure height of 245.2 nm the roughness was 1.56 ± 0.1 nm, the verticality of the obtained structures varied from 10° to 35°.

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Funding

The work was carried out within the framework of Russian Science Foundation (project no. 20-69-46076).

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Authors and Affiliations

  1. Institute of Nanotechnology, Electronics and Instrumentation, Southern Federal University, 347922, Taganrog, Russia

    V. S. Klimin, I. O. Kessler, Y. V. Morozova, A. V. Saenko & O. A. Ageev

  2. Southern Scientific Center of the Russian Academy of Sciences, 344006, Rostov-on-Don, Russia

    Z. E. Vakulov

  3. Scientific and Educational Center “Nanotechnology,” Southern Federal University, 347922, Taganrog, Russia

    O. A. Ageev

Authors
  1. V. S. Klimin
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  2. I. O. Kessler
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  3. Y. V. Morozova
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  4. A. V. Saenko
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  5. Z. E. Vakulov
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  6. O. A. Ageev
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Corresponding author

Correspondence to V. S. Klimin.

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Klimin, V.S., Kessler, I.O., Morozova, Y.V. et al. Study of Silicon Etching Modes in Combined Plasma Discharge for the Formation of Optoelectronic Structures. Bull. Russ. Acad. Sci. Phys. 86 (Suppl 1), S96–S99 (2022). https://doi.org/10.3103/S1062873822700460

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  • DOI: https://doi.org/10.3103/S1062873822700460

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