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Mode Selection of a Lateral Waveguide for Single-Mode Operation of Lasers with a Distributed Bragg Reflector
AbstractThe possibilities for mode selection in mesa-stripe lateral waveguides for single-mode operation of lasers with a surface distributed Bragg...
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High-Speed Dynamics of Semiconductor Lasers
Spatio-temporal effects are generally important for both types of semiconductor lasers, i.e. edge- and vertical-cavity surface-emitting laser (VCSEL)...
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High-Power CW InGaAs/AlGaAs (1070 nm) Lasers with a Broadened Lateral Waveguide of the Mesa-Stripe Design
AbstractSemiconductor lasers with a 10-μm-wide lateral mesa-stripe waveguide are developed, and their radiative characteristics are studied. It is...
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Introduction to Semiconductor Lasers
Every laser consists of or involves -- principle -- vital parts or mechanisms: an active medium that allows light ampli.cation and some form of...
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Semiconductor Lasers
The existence of semiconductors, a material that behaves much like an insulator at low temperature but conducts electricity like metals at an...
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Temperature-Dependent Characteristics of 1.3 μm InAs/InGaAs/GaAs Quantum Dot Ring Lasers
AbstractThe temperature characteristics of ring lasers with a diameter of 480 μm of an original design with an active region based on 10 layers of...
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Output Optical Power Dynamics of Semiconductor Lasers (1070 nm) with a Few-Mode Lateral Waveguide of Mesa-Stripe Design at Ultrahigh Drive Currents
AbstractCharacteristics of semiconductor lasers based on asymmetric heterostructures with broadened lateral waveguide of mesa-stripe design have been...
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Relationship between Wavelength and Gain in Lasers Based on Quantum Wells, Dots, and Well-Dots
AbstractA systematic study of a series of InGaAs/GaAs lasers in the 1–1 . 3 μm optical range based on quantum wells (2D), quantum dots (0D), and...
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Terahertz Quantum Cascade Lasers
Unipolar semiconductor injection lasers emitting at THz frequencies (4.3 THz, λ∼69 μm and 3.5 THz, λ∼85 μm) are discussed. The devices are based on...
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Active waveguide Bragg lasers via conformal contact PDMS stamps
Lasing is observed in Bragg lasers formed through conformal contact of a patterned PDMS stamp with a plain active film, spincoated on glass. The...
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Study of the Spatial Characteristics of Emission of Surface-Emitting Ring Quantum-Cascade Lasers
The results of studies of ring quantum-cascade lasers with surface emission due to a second-order grating formed in the top cladding layers are...
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Thermal Resistance Measurement of Edge-Emitting Semiconductor Lasers Using Spontaneous Emission Spectra
AbstractAn improved technique for thermal resistance measurement of edge-emitting diode lasers using spontaneous emission spectra, collected through...
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High Curvature Stripe Profile Extraction Algorithm of Line Structured Light Measuring System
In the line structured light measuring system, the accuracy of the process of laser stripe directly affects the measurement results. Therefore, the...
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Surface-Emitting Quantum-Cascade Lasers with a Grating Formed by Focused Ion Beam Milling
AbstractThe results of studies of 7.5–8.0 μm range surface-emitting ring quantum-cascade lasers are presented. A second- order diffraction grating...
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Early detection of stripe rust infection in wheat using light-induced fluorescence spectroscopy
In the current study, the application of fluorescence spectroscopy along with the advanced statistical technique and confocal microscopy was...
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Types of Lasers
The availability of coherent light sources has revolutionized atomic, molecular, and optical science. Since its invention in 1960, the laser has...
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Linewidth narrowing in self-injection-locked on-chip lasers
Stable laser emission with narrow linewidth is of critical importance in many applications, including coherent communications, LIDAR, and remote...
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Light-Emitting Devices and Semiconductor Lasers
Direct-gap semiconductors are the basic materials of many light-emitting devices (LEDs) and laser-diodes (LDs) found in our daily life. We give here...
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Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
Direct band gap GeSn alloys have recently emerged as promising lasing source materials for monolithic integration on Si substrate. In this work,...
