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Vertical GaN Junction Barrier Schottky Diode with p-NiO/n-GaN Hetero-Junction
Selective-area p-type do** in GaN has been regarded as one of the key challenges for vertical junction-based GaN devices. Nickel oxide (NiO) has...
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1.3 The p-n Junction and the Diode
Junctions of many kinds may be encountered in electronic components. The most frequent are the metal–semiconductor and the p-n junctionsP-n junction....
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p-n Diode Parameter Extraction
One may propose that the actual implementation of a device as a transducer in a sensing application circuit provides strong validation of its...
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Determining p-n Junction Band Gap
The present chapter describes a new technique for the accurate and reliable determination of p-n diode bandgap energy. The method makes no...
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Electrostatics of a Nanowire Radial Heterostructure p–i–n Diode
Spatial (along the radius) distribution of built-in electric field in a nanowire radial heterostructure p–i–n diode and its capacitance is calculated...
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The p-n Junction Diode
Diodes are the backbone of today’s electronic and optoelectronics technology with a wide range of applications in amplifier circuits, digital...
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Semi-conductive carbon from industrial tea waste biomass for a p-n junction
Some semiconducting carbonaceous material was developed from industrial tea waste biomass by catalytic pyrolysis and heteroatom do**; then, a p-n...
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PN Junction Diode
A pn junction diode is formed by two oppositely doped parts of a semiconductor in contact with each other. Due to the recombination of the majority...
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Hydrothermally native defect induced transparent p-n TiO2 homojunction diode
This study aims to prepare transparent defective p-type TiO 2 films using defects chemistry via the hydrothermal method, showing that the metal...
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p-n Junction Diode: A Basic Non-linear Device
A p-n junction diode is formed when two sides of an intrinsicIntrinsic semiconductorSemiconductors crystal are doped by n-type and p-type materials....
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Extraction of Semiconductor Diode Parameters A Comparative Review of Methods and Materials
This book presents a comprehensive treatise on the extraction of semiconductor diode parameters using various methods. Its focus is on...
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Bottom-up fabrication of n-ZnO-based memristor and p-Cu2O/n-ZnO heterojunction diode using electroless deposition
This study introduces a low-cost and feasible electroless deposition technique utilized to fabricate an n-ZnO-based memristor and p-Cu 2 O/n-ZnO...
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Single-diode multi-junction solar cell models five-parameter estimation method
This work presents a simplified and efficient method to estimate single-diode multi-junction solar cells model parameters such as ideality factor A,...
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SPICE Modeling of Three Novel SiC MOSFETs with Integrated Junction-Barrier-Schottky Diode
SiC MOSFETs integrated with Junction-Barrier-Schottky diode (JMOS) are used in many applications due to no bipolar degradation problem, but there is...
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Heterogeneous Junction Field Effect Devices—Schottky Diode, Metal Semiconductor Field Effect Transistor (MESFET), High Electron Mobility Transistor (HEMT)
This chapter examines in detail the physics of heterogeneous junction semiconductor junction semiconductor devices, starting with the Schottky diode,...
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Thermodynamic and electro-kinetic aspects of diffusion and migration (charge transfer) of electrons and holes across an n-p-type junction under bias and a photovoltaic cell under illumination
The present article deals with the issue of thermodynamic and electro-kinetic aspects of diffusion and migration (charge transfer) of electrons (e)...
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Study of p-n Junctions Created by Laser Implantation of In in Semi-Insulating p-CdTe:Cl
The paper analyzes the measurements results of the electrical and photoelectric properties of the barrier structures created by laser implantation of...
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Practical Verification and Comparative Analysis of One- and Two-Diode Models of Space Triple-Junction InGaP2/InGaAs/Ge Solar Cell
The practical verification and comparative analysis of one- and two-diode models of a 31.6% efficiency space triple-junction InGaP 2 /InGaAs/Ge solar...
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Green-light p-n junction particle inhomogeneous phase enhancement of MgB2 smart meta-superconductors
Improving the critical temperature ( T C ), critical magnetic field ( H C ), and critical current ( J C ) of superconducting materials has always been one of...
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Correlation between the time constant of a photoreflectance signal and the quantum efficiency of a p-n junction
A formulation was derived to connect the time constant of the photoreflectance signal and the quantum efficiency of a p - n junction. The...
