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Features of Processing of Cadmium Zinc Telluride Wafers for Molecular Beam Epitaxy Growth of Cadmium Mercury Telluride Layers
AbstractThe cadmium mercury telluride solid solution is one of the most important infrared photoelectronic materials in the world. In obtaining this...
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Wet Chemical Methods of HgCdTe Surface Treatment
AbstractChemical pretreatment and surface cleaning is a key procedure of semiconductor technologies. Development of methods for the preparation of...
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Developments and Process Improvements Leading to High-Quality and Large-Area HgCdTe LPE Detectors
Liquid-phase epitaxy (LPE) is a material growth technology used in the fabrication of mercury cadmium telluride (HgCdTe) infrared (IR) detectors,...
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Status and Progress of Research on HgCdTe Photovoltaic Infrared Detectors
In the field of infrared remote sensing, cadmium mercury telluride photovoltaic infrared detectors play a crucial role in the performance of the...
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HgCdTe Device Technology
The basic aspects of HgCdTe device technologies for the development and manufacturing of high-quality infrared detectors (IR) are presented. The...
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Matrix Element Architecture Based on a Mercury–Cadmium–Tellurium Ternary Solution with Reduced Dark Current
AbstractA ternary solution of mercury–cadmium–telluride (MCT, HgCdTe) is one of the few semiconductor materials used to design photodiodes with high...
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Dark Currents of Unipolar Barrier Structures Based on Mercury Cadmium Telluride for Long-Wave IR Detectors
Two types of long-wave infrared nBn -structures based on mercury cadmium telluride grown by molecular beam epitaxy on GaAs (013) substrates have been...
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Temperature Dependence of the Defect States in LWIR (100) and (111)B HgCdTe Epilayers for IR HOT Detectors
HgCdTe epilayers grown by chemical vapor deposition (MOCVD) on GaAs substrates operating in the long-wave infrared range were characterized by the...
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A Strategic Review on MIR Photodetectors: Recent Status and Future Trends
In our daily life, infrared photodetectors (IRPDs) play a pivotal role in numerous applications, viz. medical/imaging, ecological sensing, and night...
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Experimental Determination of the Dependence Between Spectral Response and Current–Voltage Characteristics for MWIR HgCdTe Detectors
Experimental results are reported for a medium-wavelength infrared (MWIR) HgCdTe photodetector designed in a joint laboratory run by VIGO Photonics...
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Infinite-Melt Vertical Liquid-Phase Epitaxy of HgCdTe from Hg Solution: from VLWIR to SWIR
Liquid-phase epitaxy (LPE) is a material growth technology used in the fabrication of mercury cadmium telluride (HgCdTe) infrared (IR) detectors,...
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Passivation of InSb and HgCdTe Infrared Photodiodes by Polycrystalline CdTe
Mid-wavelength InSb and HgCdTe photodiodes (PDs) passivated with polycrystalline CdTe films have been studied. Passivating layers were deposited at...
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Light People: Academician Junhao Chu
The industrial revolutions of steam power, electric power and digital power have been three key steps in the development of science and technology....
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Molecular-beam epitaxy-grown HgCdTe infrared detector: Material physics, structure design, and device fabrication
Infrared (IR) detectors have important applications in numerous civil and military sectors. HgCdTe is one of the most important materials for IR...
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Impedance of MIS Devices Based on nBn Structures from Mercury Cadmium Telluride
Three types of nBn structures based on mercury cadmium telluride grown by molecular beam epitaxy have been fabricated. As barrier layers in nBn...
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2D Modeling of the Annealing Process After Ion Implantation in n-on-p HgCdTe
A 2D model for the annealing process after ion implantation in HgCdTe was established. The 2D model was based on the diffusion equations of Hg...
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Admittance of Barrier Structures Based on Mercury Cadmium Telluride
The results of studying the admittance of unipolar barrier structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates...
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Photoluminescence Study of As Doped p-type HgCdTe Absorber for Infrared Detectors Operating in the Range up to 8 µm
A HgCdTe photodiode grown by chemical vapor deposition (MOCVD) on a GaAs substrate operating in the long-wave infrared (LWIR) range was characterized...
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Energy Position of the Size Quantization Levels in Multiple HgCdTe Quantum Wells
AbstractThe energy structure of the size quantization levels in multiple Hg 0.3 Cd 0.7 Te/HgTe quantum wells grown via molecular beam epitaxy on a...
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Annealing of MBE-grown CdTe epitaxial layer at various tellurium overpressure for reduced defect density
Cadmium telluride (CdTe) (211) epitaxial layers were grown on GaAs (211) substrates. These CdTe layers were annealed under tellurium overpressure at...
